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A systematic investigation of the structural and electrophysical properties formed under the influence of stoichiometry in CdTe thin films

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Year: 2026
Type: article
Source: Physica B Condensed Matter
DOI: 10.1016/j.physb.2026.419292
Authors: I.O. Kosimov, B.D. Igamov, I.R. Bekpulatov, A.I. Kamardin, Sh.T. Khozhiev, F.N. Khurramova, Zh.B. Khuzhaniyazov, F.K. Khallokov, Hokman Mahmudov, Bahar Mammadova, Seljan Hajiyeva, Anar Aliyev, Gunel Imanova
Institutions: Academy of Sciences Republic of Uzbekistan, Karshi State University, Tashkent State Medical University, Tashkent State Technical University named after Islam Karimov, Bukhara State Medical Institute named after Abu Ali ibn Sino, Institute of Physics, Ministry of Science and Education Republic of Azerbaijan, Fizika İnstitutu Publik Hüquqi Şəxs, Khazar University, Azerbaijan University of Architecture and Construction
Language: English

Topic: Chalcogenide Semiconductor Thin Films
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W7204901889
FWCI:
Cites: 15
Cited by:
Related to: 10
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