Author

Zh. B. Khuzhaniyazov

Observed names: Zh.B. Khuzhaniyazov, Ж.Б. Хужаниязов

Institution: Tashkent State Technical University named after Islam Karimov

Observed institution: Tashkent State Technical University named after Islam Karimov

OpenAlex ID: A5033229151

On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

2011 · A. S. Rysbaev, A. K. Tashatov, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 24

Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

2007 · M. T. Normuradov, A. K. Tashatov, et al. · Journal of Communications Technology and Electronics · 23

Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

2014 · A. S. Rysbaev, Zh. B. Khuzhaniyazov, et al. · Technical Physics · 17

Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

2014 · A. S. Rysbaev, Zh. B. Khuzhaniyazov, et al. · Technical Physics · 12

A systematic investigation of the structural and electrophysical properties formed under the influence of stoichiometry in CdTe thin films

2026 · I.O. Kosimov, B.D. Igamov, et al. · Physica B Condensed Matter

ТЕОРЕТИЧЕСКОЕ ОБЪЯСНЕНИЕ ЭФФЕКТА УМЕНЬШЕНИЯ ЭНЕРГИИ ПЛАЗМОНОВ В Si (111) ПРИ ИМПЛАНТАЦИИ ИОНОВ C БОЛЬШОЙ ДОЗОЙ

2018 · Ж.Б. Хужаниязов, А.С. Рысбаев, et al. · «Узбекский физический журнал»

Works count: 6

Citation count: 76

H-index: 4

I10-index: 4