Author

Partha Mukhopadhyay

Observed name: P. Mukhopadhyay

Institution: Tokyo Electron (Japan)

Observed institutions: University of Central Florida, Tokyo Electron (Japan), Indian Institute of Technology Kharagpur

ORCID: 0000-0002-5838-8007

Observed ORCID: 0000-0002-5838-8007

OpenAlex ID: A5000145267

Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD

2017 · Fikadu Alema, Brian Hertog, et al. · Journal of Crystal Growth · 163

Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film

2019 · Fikadu Alema, Brian Hertog, et al. · APL Materials · 97

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Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film

2017 · Fikadu Alema, Brian Hertog, et al. · physica status solidi (a) · 97

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

2018 · Saptarsi Ghosh, Subhashis Das, et al. · IEEE Transactions on Electron Devices · 45

High responsivity tin gallium oxide Schottky ultraviolet photodetectors

2019 · Partha Mukhopadhyay, Winston V. Schoenfeld · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 37

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

2014 · Sanjay Kumar Jana, Partha Mukhopadhyay, et al. · Journal of Applied Physics · 37

Tuning the responsivity of monoclinic ( I n x G a 1 − x ) 2 O 3 solar-blind photodetectors grown by metal organic chemical vapor deposition

2020 · Isa Hatipoglu, Partha Mukhopadhyay, et al. · Journal of Physics D Applied Physics · 34

Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis

2015 · Syed Mukulika Dinara, Sanjay Kr. Jana, et al. · AIP Advances · 34

Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

2015 · Rahul Kumar, Ankush Bag, et al. · Applied Surface Science · 31

Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy

2019 · Partha Mukhopadhyay, Winston V. Schoenfeld · Applied Optics · 29

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

2022 · Partha Mukhopadhyay, Isa Hatipoglu, et al. · Applied Physics Letters · 26

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2DEG modulation in double quantum well enhancement mode nitride HEMT

2015 · Ankush Bag, Palash Das, et al. · Physica E Low-dimensional Systems and Nanostructures · 25

Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film

2017 · Fikadu Alema, Brian Hertog, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 22

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

2020 · Partha Mukhopadhyay, Isa Hatipoglu, et al. · Advanced Photonics Research · 19

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Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

2014 · Mihir Kumar Mahata, Saptarsi Ghosh, et al. · AIP Advances · 19

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Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

2013 · Partha Mukhopadhyay, Subhra Chowdhury, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 16

Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

2014 · Rahul Kumar, P. Mukhopadhyay, et al. · Applied Surface Science · 15

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

2014 · Partha Mukhopadhyay, Ankush Bag, et al. · Journal of Electronic Materials · 15

Epitaxial growth of Co3O4 thin films using Co(dpm)3 by MOCVD

2019 · Fikadu Alema, Andrei Osinsky, et al. · Journal of Crystal Growth · 13

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

2014 · Saptarsi Ghosh, Syed Mukulika Dinara, et al. · Applied Physics Letters · 12

Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon

2014 · Partha Mukhopadhyay, Utsav Banerjee, et al. · Solid-State Electronics · 11

Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)

2016 · Rahul Kumar, Ankush Bag, et al. · Electronic Materials Letters · 10

Annealing Effects in Sub-8 μm Pitch Die-to-Wafer Hybrid Bonding

2024 · Partha Mukhopadhyay, Laura Wenzel, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 8

High-Performance HfO 2 /Al 2 O 3 Superlattice MIM Capacitor in a 200 mm High-Volume Batch-ALD Platform

2024 · Partha Mukhopadhyay, Ivan Fletcher, et al. · IEEE Transactions on Electron Devices · 8

Correlation between deep-level defects and functional properties of β-(SnxGa1-x)2O3 on Si photodetectors

2021 · Isa Hatipoglu, Daniel A. Hunter, et al. · Journal of Applied Physics · 8

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Works count: 59

Citation count: 915

H-index: 16

I10-index: 22