Author

R. Wahlich

Observed names: R Wahlich, Reinhold Wahlich

Observed institution: Wacker Group (Germany)

OpenAlex ID: A5000965110

Nickel solubility in intrinsic and doped silicon

2004 · A. A. Istratov, P. Zhang, et al. · Journal of Applied Physics · 59

Gettering of Copper and Nickel in p/p+ Epitaxial Wafers

2000 · R. Hoelzl, D. Huber, et al. · Journal of The Electrochemical Society · 32

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Mechanical properties of nitrogen-doped CZ silicon crystals

2002 · V Orlov, H Richter, et al. · Materials Science in Semiconductor Processing · 26

Upper yield point of large diameter silicon

2001 · A. Fischer, H. Richter, et al. · Microelectronic Engineering · 16

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

1995 · D. Gräf, U. Lambert, et al. · Journal of The Electrochemical Society · 16

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Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

1996 · D. Gräf, U. Lambert, et al. · Materials Science and Engineering B · 13

Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon

1999 · U. Lambert, A. Huber, et al. · Microelectronic Engineering · 12

Oxide precipitates in annealed nitrogen-doped 300mm CZ-SI

2002 · V.D. Akhmetov, H. Richter, et al. · Materials Science in Semiconductor Processing · 11

Shaped crystal growth of silicon foils by raft

1987 · A. Beck, J. Geissler, et al. · Journal of Crystal Growth · 11

300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation

2011 · G. Kissinger, G. Raming, et al. · Physica B Condensed Matter · 7

Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers

2004 · V. D. Akhmetov, H. Richter, et al. · The European Physical Journal Applied Physics · 7

Processing and Characterization of 300 mm Argon-Annealed Wafers

2003 · Timo Müller, E. Daub, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 6

Mechanical strength of 300 mm diameter silicon wafers at high temperatures: modeling and simulation

1999 · A. Fischer, Th. Grabolla, et al. · Microelectronic Engineering · 5

Nitrogen Doped 300 mm Czochralski Silicon Wafers Optimized with Respect to Voids with Laterally Homogeneous Internal Getter Capabilities

2012 · Gudrun Kissinger, Georg Raming, et al. · Materials science forum · 4

Enhancement of gettering efficiencies of different silicon substrates during a 0.18 μm LTB CMOS process simulation –

2001 · R. Hoelzl, L. Fabry, et al. · Microelectronic Engineering · 2

Silicon Substrate Related Gate Oxide Integrity at Different Oxide Thicknesses

2000 · ED Grann, A Huber, et al. · 2

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 · Timo Müller, G. Kissinger, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

1996 · D. Gräf, U. Lambert, et al. · Elsevier eBooks · 1

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 · Timo Müller, G. Kissinger, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

Modeling and experimental verification of the 300mm Ar anneal process

2005 · T. Müller, R. Wahlich, et al. · Materials Science and Engineering B

Shaped crystal growth 1986 — A selected bibliography for 1980–1985

1987 · A. Beck, J. Geissler, et al. · Journal of Crystal Growth

Diffusion length and solar cell efficiency

1982 · Dániel Huber, Andreas Bachmaier, et al. · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

Defect interactions in ''solar'' silicon

1982 · D. Helmreich, Dániel Huber, et al. · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

Works count: 28

Citation count: 231

H-index: 9

I10-index: 9