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A. V. Zinovchuk

Observed names: A V Zinovchuk, A. Zinovchuk, A.V. Zinovchuk, Андрій ЗІНОВЧУК, Андрій Зіновчук, Зіновчук А. В., Зіновчук, А. В.
ORCID: 0000-0003-1376-853X
Observed ORCIDs: 0000-0003-1376-853X, 0000-0002-2980-5764
OpenAlex ID: A5002066138
Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
2011 · Ya Ya Kudryk, A V Zinovchuk · Semiconductor Science and Technology · 32
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The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes
2008 · A. V. Zinovchuk, O. Yu. Malyutenko, et al. · Journal of Applied Physics · 28
Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
2012 · Ya Ya Kudryk, A K Tkachenko, et al. · Semiconductor Science and Technology · 25
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Room-temperature InAsSbP∕InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection
2006 · V. K. Malyutenko, O. Yu. Malyutenko, et al. · Applied Physics Letters · 20
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
2005 · V. K. Malyutenko, O. Y. Malyutenko, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 15
Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices
2008 · V K Malyutenko, A V Zinovchuk, et al. · Semiconductor Science and Technology · 14
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Optimized valence force field model for the lattice properties of non-ideal III-nitride wurtzite materials
2019 · A.V. Zinovchuk, E.A. Sevost'yanov · Physica B Condensed Matter · 9
Alloy-assisted Auger recombination in InGaN
2018 · A. V. Zinovchuk, A. M. Gryschuk · Optical and Quantum Electronics · 9
Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission
2011 · A. V. Zinovchuk, A. K. Tkachenko · Semiconductors · 5
A method for fast calculating the electronic states in 2D quantum structures based on AIIIBV nitrides
2023 · V.A. Slipokurov, P.P. Korniychuk, et al. · Semiconductor Physics Quantum Electronics & Optoelectronics · 4
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Electronic band structure pseudopotential calculation of InGaN/GaN quantum wells
2022 · A. V. Zinovchuk, V. S. Slipokurov · Optical and Quantum Electronics · 4
The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes
2012 · Ya. Ya. Kudryk, A. V. Zinovchuk · Technical Physics Letters · 4
Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices
2006 · V. Malyutenko, A. Zinovchuk · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Numerical determination of concentration-dependent Auger recombination coefficient in $$\varvec{n}$$ n -InGaN alloys
2015 · A. V. Zinovchuk · Optical and Quantum Electronics · 2
Polarization effect on the Auger recombination coefficient in single InGaN/GaN quantum wells
2025 · V.S. Slipokurov, A.V. Zinovchuk · Physica B Condensed Matter · 1
Direct and indirect mechanisms of auger recombination in n-InGaN
2014 · A. V. Zinovchuk · Technical Physics Letters · 1
Comparative numerical analysis of intrinsic recombination mechanisms in polar and nonpolar nitride quantum wells
2026 · V S Slipokurov, S A Postova, et al. · Semiconductor Science and Technology
Оже-рекомбінація в полярних InGaN/GaN квантових ямах
2025 · A.V. Zinovchuk, V.S. Slipokurov · Ukrainian Journal of Physics
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Electrical characterization of Cr/p–Hg₁₋ₓCdₓTe (x = 0.28, 1.0) contacts using LTLM: contact resistance and current transport mechanism
2025 · F. Sizov, A. Zinovchuk, et al. · Applied Physics A
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Wizer.me Як Засіб Створення Шаблонів Для Навчально-методичного Забезпечення
2025 · Марія Андрощук, Андрій Зіновчук · Наука і техніка сьогодні
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Флуктуації п’єзоелектричної поляризації в квантових ямах на основі III-нітридів
2023 · A.V. Zinovchuk, D.A. Stepanchikov, et al. · Ukrainian Journal of Physics
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ФАКТОР ІДЕАЛЬНОСТІ В СВІТЛОДІОДАХ НА ОСНОВІ InGaN/GaN КВАНТОВИХ ЯМ З НЕОДНОРІДНИМ РОЗТІКАННЯМ СТРУМУ
2023 · Андрій ЗІНОВЧУК, Дмитро СТЕПАНЧИКОВ, et al. · Physics and educational technology
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Influence of Atomic Disorder on the Auger Recombination Rate in p-InGaN Alloys
2020 · A. V. Zinovchuk, E. A. Sevost’yanov · Ukrainian Journal of Physics
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Works count: 26
Citation count: 177
H-index: 8
I10-index: 6
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