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Tsutomu Murakawa

Observed names: T. Murakawa, Tsutomu - Murakawa, 努 村川, 村川, 努
ORCID: 0000-0001-5761-866X
Observed ORCID: 0000-0001-5761-866X
OpenAlex ID: A5007285919
49.4: High‐definition Top‐emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors
2011 · Nozomu Sugisawa, Toshiki Sasaki, et al. · SID Symposium Digest of Technical Papers · 34
Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence
2019 · Shunpei Yamazaki, Satoru Ohshita, et al. · International Journal of Ceramic Engineering & Science · 33
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28.2: Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronic Paper Function
2011 · Hideaki Shishido, Seiko Amano, et al. · SID Symposium Digest of Technical Papers · 32
Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology
2021 · H. Baba, S. Ohshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
11.2: A New Process for Manufacture of Low Voltage, Polymer‐Stabilized Blue Phase LCDs
2011 · Daisuke Kubota, Tetsuji Ishitani, et al. · SID Symposium Digest of Technical Papers · 15
50.2: High Reliable In‐Ga‐Zn‐Oxide FET Based Electronic Global Shutter Sensors for In‐Cell Optical Touch Screens and Image Sensors
2011 · Hikaru Tamura, Toshiki Hamada, et al. · SID Symposium Digest of Technical Papers · 15
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
2024 · Takeya Hirose, Yuki Okamoto, et al. · IEEE Journal of the Electron Devices Society · 13
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1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS
2023 · Y. Okamoto, Y. Komura, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 13
A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In–Ga–Zn Oxide BEOL-FETs
2019 · Takahiko Ishizu, Yuto Yakubo, et al. · Symposium on VLSI Circuits · 13
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
2023 · Naomi Yazaki, Ryosuke Motoyoshi, et al. · IEEE Journal of the Electron Devices Society · 12
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32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
2022 · Munehiro Kozuma, Yuki Okamoto, et al. · SID Symposium Digest of Technical Papers · 12
Analysis for Extremely Low Off-State Current in CAAC-IGZO FETs
2015 · Masashi Tsubuku, Daisuke Matsubayashi, et al. · ECS Transactions · 11
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An Energy-Efficient Normally Off Microcontroller With 880-nW Standby Power, 1 Clock System Backup, and 4.69-$\mu$ s Wakeup Featuring 60-nm CAAC-IGZO FETs
2019 · Takahiko Ishizu, Kazuma Furutani, et al. · IEEE Solid-State Circuits Letters · 9
The application of the analysis of potential driven particle diffusion to the strength of materials
2011 · A. Toshimitsu Yokobori, Toshihito Ohmi, et al. · Strength Fracture and Complexity · 9
A Theoretical Analysis of Electromigration Failure in Aluminum Interconnections
2006 · Takenao Nemoto, A. Toshimitsu Yokobori, Jr., et al. · Japanese Journal of Applied Physics · 9
27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
2022 · Ryota Hodo, Satoru Saito, et al. · SID Symposium Digest of Technical Papers · 8
Embedded DRAM Using C-Axis-Aligned Crystalline In-Ga-Zn Oxide FET with 1.8V-Power-Supply Voltage
2019 · Eri Yamamoto, Seiya Saito, et al. · ECS Transactions · 8
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Numerical Analysis of Vacancy Transport by Residual Stress in Electromigration on LSI Interconnects
2010 · Takenao Nemoto, Toshimitsu A. Yokobori, Jr., et al. · Japanese Journal of Applied Physics · 7
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Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
2024 · Hiroki Inoue, Takeya Hirose, et al. · IEEE International Memory Workshop (IMW) · 6
A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
2022 · M. Endo, S. Numata, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
2025 · Shunpei Yamazaki, Tatsuya Onuki, et al. · International Journal of Ceramic Engineering & Science · 4
5009‐ppi, 10000‐cd/m 2 , OLED/OS/Si structure display with built‐in CPU and display driver
2025 · Yuki Tamatsukuri, Akitsugu Miyairi, et al. · Journal of the Society for Information Display · 4
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET
2024 · Hiromi Sawai, Motomu Kurata, et al. · Japanese Journal of Applied Physics · 3
Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit
2023 · Hiromi Sawai, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Crystal Indium Oxide for 64-kbit 2T0C Memory with 5-ns Read Time, Monolithically Stacked on Si CMOS
2025 · T. Matsuzaki, K. Furutani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2
Works count: 51
Citation count: 312
H-index: 11
I10-index: 12
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