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Motomu Kurata

Observed name: M. Kurata
ORCID: 0009-0004-3715-8917
Observed ORCID: 0009-0004-3715-8917
OpenAlex ID: A5007316574
20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current
2015 · D. Matsubayashi, Y. Asami, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 49
High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits
2024 · Shunpei Yamazaki, Fumito Isaka, et al. · Communications Materials · 29
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Properties of c -axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process
2016 · Yoshinobu Asami, Motomu Kurata, et al. · Japanese Journal of Applied Physics · 9
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High-temperature Electrical Characteristics of 60nm CAAC-IGZO FET : Comparison with Si FET
2018 · H. Kunitake, S. Ohshita, et al. · International Conference on Solid State Devices and Materials (SSDM) · 6
Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
2025 · Shunpei Yamazaki, Tatsuya Onuki, et al. · International Journal of Ceramic Engineering & Science · 4
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET
2024 · Hiromi Sawai, Motomu Kurata, et al. · Japanese Journal of Applied Physics · 3
Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit
2023 · Hiromi Sawai, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Source/Drain Engineering by Tantalum Nitride (TaNx) Electrode for Boosting OSFET Performance
2021 · N. Okuno, Y. Sato, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Crystal Indium Oxide for 64-kbit 2T0C Memory with 5-ns Read Time, Monolithically Stacked on Si CMOS
2025 · T. Matsuzaki, K. Furutani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2
Crystal Indium-Oxide FET with 21.7-nm Gate Length and 27.2-nm Channel Width Enabling High Switching Performance
2026 · yuzuki yanagiya, Satoru Saito, et al. · International Conference on Solid State Devices and Materials (SSDM)
Oxide Ceramics Large‐Scale Integration Devices to Mitigate Global Extreme Weather Due to Computers in the AI Era
2026 · Shunpei Yamazaki, Tatsuya Onuki, et al. · International Journal of Ceramic Engineering & Science
High-Performance Single-Crystal In2O3 FET Toward 3D VLSI Circuits
2025 · Satoru Saito, Tatsuya Onuki, et al. · Proceedings of the International Display Workshops
Normally-Off CPU with Crystal Indium Oxide Enabling Power Gating Operation with Power Supply Voltage of 0.8 V
2025 · Masashi Fujita, Kouhei Toyotaka, et al. · International Conference on Solid State Devices and Materials (SSDM)
Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer
2022 · MASAHIRO WAKUDA, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM)
Optimum Composition Ratio of CAAC-IGZO
2022 · Toshiki Hamada, Yuichi Sato, et al. · International Conference on Solid State Devices and Materials (SSDM)
Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm
2022 · Hitoshi Kunitake, Kazuki Tsuda, et al. · Research Square
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Characteristics Variations and Reliability of CAAC-IGZO FETs
2019 · S. Tezuka, T. Takeuchi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Trench Gate Process for 60-nm-Node C-Axis Aligned Crystalline In-Ga-Zn-O Field-Effect Transistors
2015 · Y. Asami, A. Shimomura, et al. · International Conference on Solid State Devices and Materials (SSDM)
Well Controlled Array of Si Nanopillar with Metal Core as Negative Electrode for Lithium-Ion Batteries
2013 · Teppei Oguni, Ryota Tajima, et al. · ECS Transactions
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Well Controlled Array of Si Nanopillar with Metal Core as Negative Electrode for Lithium Ion Batteries
2012 · Teppei Oguni, Ryota Tajima, et al. · ECS Meeting Abstracts
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Works count: 20
Citation count: 108
H-index: 4
I10-index: 2
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