Author

Y. Monteil

Observed names: M. Yves, M. Yves Monteil, MONTEIL, Yves, Monteil, Y, Monteil, Y., Monteil, Yves, Y MONTEIL, Y Monteil, Y. MONTEIL, Y. Monteil Et, Yves Monteil

Observed institutions: Lyon 1 Université, Centre National de la Recherche Scientifique, Université Oran 1 Ahmed Ben Bella, Lebanese University, Simon Fraser University, Université de Lyon, Aristotle University of Thessaloniki, Universidad de Cádiz, National Council for Scientific Research, École Nationale Polytechnique d'Oran, Laboratoire des Multimatériaux et Interfaces, Institut National de Physique Nucléaire et de Physique des Particules, Institute of Nuclear Physics of Lyon, Université Montpellier 2, Ecole Normale Supérieure d'Oran

OpenAlex ID: A5008453375

Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization

1996 · G. Ferro, Y. Monteil, et al. · Journal of Applied Physics · 53

Structural phase transition, elastic properties and electronic properties of chalcopyrite CuAlX2 (X=S, Se, Te)

2009 · A. Abdellaoui, M. Ghaffour, et al. · Journal of Alloys and Compounds · 52

A comprehensive study of SiC growth processes in a VPE reactor

2002 · Thierry Chassagne, Gabriel Ferro, et al. · Thin Solid Films · 46

Magnetic Properties of Hematite Nanotubes Elaborated by Electrospinning Process

2011 · Cynthia Eid, Dominique Luneau, et al. · The Journal of Physical Chemistry C · 42

Structural properties of undoped and doped cubic GaN grown on SiC(001)

2002 · E. Martinez-Guerrero, E. Bellet-Amalric, et al. · Journal of Applied Physics · 41

Iron-based 1D nanostructures by electrospinning process

2010 · Cynthia Eid, Arnaud Brioude, et al. · Nanotechnology · 40

Strain Tailoring in 3C‐SiC Heteroepitaxial Layers Grown on Si(100)

2006 · G. Ferro, T. Chassagne, et al. · Chemical Vapor Deposition · 39

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Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapour deposition

1996 · G. Ferro, Y. Monteil, et al. · Thin Solid Films · 35

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism

2006 · Maher Soueidan, Gabriel Ferro, et al. · Crystal Growth & Design · 33

Improved electronic properties of GaAs surfaces stabilized with phosphorus

1991 · P. Viktorovitch, M. Gendry, et al. · Applied Physics Letters · 33

Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

2006 · Philippe Rodriguez, Laurent Auvray, et al. · Journal of Crystal Growth · 32

A New Phosphorus Selenide P4Se4

1975 · Y. Monteil, H. Vincent · Zeitschrift für anorganische und allgemeine Chemie · 32

On the growth of 4H–SiC by low-temperature liquid phase epitaxy in Al rich Al–Si melts

2003 · Christophe Jacquier, Gabriel Ferro, et al. · Journal of Crystal Growth · 31

Growth and characterization of high quality BxGa1−xAs/GaAs(001) epilayers

2002 · H. Dumont, J. Dazord, et al. · Journal of Crystal Growth · 31

Optical properties of InP/InAlAs/InP grown by MOCVD on (100) substrates: influence of V/III molar ratio

2002 · J Hellara, K Borgi, et al. · Materials Science and Engineering C · 31

Growth and characterization of type-II/type-I AlGaInAs/InP interfaces

1992 · M. Sacilotti, F. Motisuke, et al. · Journal of Crystal Growth · 30

Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

2003 · H. Dumont, D. Rutzinger, et al. · Applied Physics Letters · 29

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

2003 · G Ferro, J Camassel, et al. · Semiconductor Science and Technology · 28

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Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

2010 · R. Hamila, F. Saidi, et al. · Journal of Alloys and Compounds · 27

Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

2006 · M. Soueidan, G. Ferro, et al. · Materials Science and Engineering B · 27

Study of surface defects on 3C–SiC films grown on Si(111) by CVD

2003 · M.J Hernández, G Ferro, et al. · Journal of Crystal Growth · 27

Structural and optical study of BxInyGa1−x−yAs/GaAs and InyGa1−yAs/GaAs QW's grown by MOCVD

2009 · F. Saidi, R. Hamila, et al. · Journal of Alloys and Compounds · 26

Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

2006 · Kin Kiong Lee, Gerhard Pensl, et al. · Japanese Journal of Applied Physics · 25

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How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates

2001 · Thierry Chassagne, Gabriel Ferro, et al. · Materials science forum · 24

Optical studies of InP/InAlAs/InP interface recombinations

1993 · P. Abraham, Y. Monteil, et al. · Applied Surface Science · 24

Works count: 274

Citation count: 2,100

H-index: 24

I10-index: 80