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P. Grabbe

Observed name: Paul Grabbe
OpenAlex ID: A5009407023
Electron Mass Tunneling along the Growth Direction of (Al,Ga) As/GaAs Semiconductor Superlattices
1986 · T. Duffield, R. Bhat, et al. · Physical Review Letters · 111
Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
1988 · K. Kash, J. M. Worlock, et al. · Applied Physics Letters · 92
Strain-induced confinement of carriers to quantum wires and dots within an InGaAs-InP quantum well
1989 · K. Kash, R. Bhat, et al. · Applied Physics Letters · 79
Aluminum ion-implantation enhanced intermixing of GaAs-AlGaAs quantum-well structures
1988 · K. Kash, B. Tell, et al. · Journal of Applied Physics · 61
Magnetoconductance and quantized confinement in narrow silicon inversion layers
1984 · W.J. Skocpol, L.D. Jackel, et al. · Surface Science · 53
Semileaky thin-film optical isolator
1981 · Steven T. Kirsch, W. A. Biolsi, et al. · Journal of Applied Physics · 52
50−nm silicon structures fabricated with trilevel electron beam resist and reactive-ion etching
1981 · L. D. Jackel, R. E. Howard, et al. · Applied Physics Letters · 45
Breakdown of cyclotron resonance in semiconductor superlattices
1988 · T. Duffield, R. Bhat, et al. · Solid State Communications · 31
400-Å linewidth e-beam lithography on thick silicon substrates
1980 · R. E. Howard, E. L. Hu, et al. · Applied Physics Letters · 31
Twenty-five nm features patterned with trilevel e-beam resist
1981 · D. M. Tennant, L. D. Jackel, et al. · Journal of Vacuum Science and Technology · 26
Trilevel lift‐off process for refractory metals
1982 · P. Grabbe, E. L. Hu, et al. · Journal of Vacuum Science and Technology · 21
Multigigabit/s 1.5 mu m lambda /4-shifted DFB OEIC transmitter and its use in transmission experiments
1990 · Y.H. Lo, P. Grabbe, et al. · IEEE Photonics Technology Letters · 19
High-performance InPreflection-grating wavelength multiplexer
1994 · K.R. Poguntke, J.B.D. Soole, et al. · Electronics Letters · 14
Shallow donors in extended state GaAs/(Al, Ga) As superlattices
1986 · T. Duffield, R. Bhat, et al. · Solid State Communications · 14
An uncompensated silicon bipolar junction transistor fabricated using molecular beam epitaxy
1981 · R.G. Swartz, J.H. McFee, et al. · IEEE Electron Device Letters · 14
CASFET: A MOSFET-JFET cascode device with ultralow gate capacitance
1984 · L.D. Jackel, R.G. Swartz, et al. · IEEE Transactions on Electron Devices · 9
Ion Beam Processing Using Metal on Polymer Masks
1983 · E. L. Hu, R. E. Howard, et al. · Journal of The Electrochemical Society · 7
Buried channel MOSFET's with gate lengths from 2.5 µm to 700 Å
1982 · R.E. Howard, L.D. Jackel, et al. · IEEE Electron Device Letters · 7
Dynamics of photoexcited carriers in micron-size InP-InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy
1988 · K. Kash, P. Grabbe, et al. · Applied Physics Letters · 5
Anisotropic Ion Beam Assisted Etching of Optical Structures in GaAs and InP
1988 · A. Scherer, B. P. Van Der Gaag, et al. · MRS Proceedings · 5
Frame-level OEO-Regenerating GPON Reach Extender
2011 · Janar Thoguluva, Umesh Bakhru, et al. · Optical Fiber Communication Conference · 4
SiGMOS—A silicon gigabit/s NMOS technology
1983 · P.K. Ko, A.M. Voshchenkov, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Vertical silicon membrane arrays patterned with tri-level e-beam resist
1982 · E. L. Hu, D. M. Tennant, et al. · Journal of Electronic Materials · 3
Wavelength precision of monolithic InPgrating multiplexer/demultiplexers
1994 · J.B.D. Soole, R. Bhat, et al. · Electronics Letters · 2
High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology
1990 · Y.H. Lo, M. Bagheri, et al. · Electronics Letters · 2
Works count: 41
Citation count: 718
H-index: 14
I10-index: 15
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