Author

Hongtu Qian

Observed names: H Qian, H. Qian, Qian, Hongtu

Institution: Dynex Semiconductor (United Kingdom)

Observed institutions: Chinese Academy of Sciences, Dynex Semiconductor (United Kingdom), University of Cambridge, University of Manchester, Institute of Microelectronics, University of Sheffield

ORCID: 0000-0003-4597-6325

Observed ORCID: 0000-0003-4597-6325

OpenAlex ID: A5010967229

Dislocation-assisted electron and hole transport in GaN epitaxial layers

2025 · Yixu Yao, Sen Huang, et al. · Nature Communications · 38

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All-GaN-Integrated Cascode Heterojunction Field Effect Transistors

2017 · Sheng Jiang, Kean Boon Lee, et al. · IEEE Transactions on Power Electronics · 30

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Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant

2015 · Z H Zaidi, K B Lee, et al. · Semiconductor Science and Technology · 26

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2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

2024 · Haochen Zhang, Hu Wang, et al. · IEEE Electron Device Letters · 24

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

2016 · H. Qian, K.B. Lee, et al. · Journal of Crystal Growth · 13

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

2015 · Kean B. Lee, Ivor Guiney, et al. · Applied Physics Express · 12

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

2018 · Z. H. Zaidi, K. B. Lee, et al. · Journal of Applied Physics · 11

Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction

2006 · H. H. Liu, X. F. Duan, et al. · Applied Physics Letters · 11

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

2014 · Z. H. Zaidi, K. B. Lee, et al. · Journal of Applied Physics · 10

Rapid detection of capture and emission processes in surface and buffer traps: Understanding dynamic degradation in GaN power devices

2024 · Yixu Yao, Sen Huang, et al. · Power Electronic Devices and Components · 4

Thermal and microwave performance enhancement of AlGaN/GaN HEMT using an ultra-thin buffer on Si substrate for handset applications

2025 · Hongtu Qian, Yue Sun, et al. · Applied Physics Letters · 2

First Integration of GaN Low-Voltage PA MMIC into Mobile Handsets with Superior Efficiency Over 50%

2025 · Haochen Zhang, Yue Sun, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2

Structural Design of GaN MIS-HEMTs for Low-Earth-Orbit Radiation Hardness: Integrating Back-Barrier and Deep Source Via

2026 · Chenrui Zhang, Yixu Yao, et al. · IEEE Transactions on Electron Devices

Spatially resolved I-DLTS mapping of hole migration induced traps in AlGaN/GaN HEMTs

2026 · Chenrui Zhang, Yixu Yao, et al. · Journal of Physics D Applied Physics

Regrown-Ohmic-Contacts-Enabled GaN HEMTs With Ultra-Low Noise Figures and Superior Power Merits for Wide-Band LNA Applications

2026 · Haochen Zhang, Mingshuo Zhang, et al. · IEEE Electron Device Letters

Thermal and Microwave Performance Enhancement of AlGaN/GaN HEMT Using an Ultra-thin Buffer on Si Substrate for Handset Applications

2025 · Pei, Yi, Liu, Jianan, et al. · AIP Publishing

Supplementary Material

2025 · Qian, Hongtu, Sun, Yue, et al. · AIP Publishing

Novel GaN-based Vertical Field Effect Transistors for Power Switching

2017 · Hongtu Qian · White Rose eTheses Online (University of Leeds, The University of Sheffield, University of York)

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InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy

2006 · Ah Xu, LK Ai, et al.

Works count: 19

Citation count: 183

H-index: 9

I10-index: 9