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Rémi Gillet

Observed names: Gillet, R., Gillet, Rémi, R. Gillet, Rémi, Gillet
ORCID: 0000-0003-3881-3093
Observed ORCID: 0000-0003-3881-3093
OpenAlex ID: A5011124937
Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices
2019 · Marie-Amandine Pinault-Thaury, Solange Temgoua, et al. · Applied Physics Letters · 59
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Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond
2021 · Marie-Amandine Pinault-Thaury, Ingrid Stenger, et al. · Carbon · 42
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New Process for Electrical Contacts on (100) N‐type Diamond
2017 · Nephi Temahuki, Rémi Gillet, et al. · physica status solidi (a) · 18
Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond
2021 · I. Stenger, M.-A. Pinault-Thaury, et al. · Journal of Applied Physics · 14
Free-standing n-type phosphorus-doped diamond
2024 · Rémi Gillet, Ingrid Stenger, et al. · Diamond and Related Materials · 6
Simulations of a vertical JFET in diamond with its N-type JTE
2026 · Bouillevaux, Anatole, Isoird, Karine, et al. · HAL
Impurity analysis of synthetic diamond for electronics and quantum physics
2025 · Estelle Loire, Rémi Gillet, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Diode PIN verticale sur diamant (100) autosupporté à base de couches i et n dopées phosphore
2025 · Sevely, Florent, Grosset-Darracq, Rachel, et al. · HAL
Spin properties of NV ensembles in phosphorus doped diamond
2025 · Stenger, Ingrid, Arnold, Christophe, et al. · HAL
Secondary ion mass spectrometry (SIMS) analysis of (113) PIN & NIP diamond structures
2025 · Gillet, Rémi, Mesples-Carrère, Rémi, et al. · HAL
Free-Standing N-Type Phosphorus-Doped Diamond
2024 · Rémi Gillet, Ingrid Stenger, et al. · SSRN Electronic Journal
Free-Standing N-Type Phosphorus-Doped Diamond
2024 · Marie-Amandine Pinault-Thaury, Rémi Gillet, et al. · SSRN Electronic Journal
Vertical pin diodes on large freestanding (100) diamond film
2023 · Pinault-Thaury, M.A., Bouras, Mohamed, et al. · HAL
Understanding growth mechanisms with quasi-delta phosphorus 12 C enriched diamond
2023 · Pinault-Thaury, M.A., Bouras, Mohamed, et al. · HAL
Locally Ion Implantation and Annealing Effects in Diamond
2023 · Bouras, Mohamed, Gourad, Raid, et al. · HAL
Pseudo-delta phosphorus doped diamond
2023 · Pinault-Thaury, M.A., Gillet, Rémi, et al. · HAL
Ionic analysis of phosphorus doped-diamond homoepilayers grown with different carbon isotopic abundances
2023 · Pinault-Thaury, M.A., Jomard, F., et al. · HAL
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Analyse ionique d’homoépitaxies de diamant dopé au phosphore de différentes abondances isotopiques en carbone
2022 · Pinault-Thaury, M.A., Jomard, François, et al. · HAL
Locally Ion Implantation and Annealing Effects in Diamond
2022 · Bouras, Mohamed, Gourad, Raid, et al. · HAL
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The challenging road of freestanding (100) n-type diamond: The challenging road of freestanding (100) n-type diamond
2022 · Pinault-Thaury, M.A., Gillet, Rémi, et al. · HAL
13-carbon isotopically depleted n-type phosphorus doped diamond homoepilayer
2022 · Pinault-Thaury, M.A., Mohamed, Bouras, et al. · HAL
Defects in homoepitaxial n-type doped diamond by TEM related techniques
2021 · Villar, Maria Pilar, Alegre, Maria, et al. · HAL
Electrical properties of n-type phosphorus-doped diamond grown on (113) orientation compared to the conventional (111) and (100) orientations
2020 · Pinault-Thaury, M.A., Stenger, Ingrid, et al. · HAL
Dislocations generation in selectively grown (111) phosphorus-doped homoepitaxial diamond
2019 · Maria Pilar, Vilar, Fernando, Lloret, et al. · HAL
Mobility of n-type (100) homoepitaxial CVD diamond
2019 · Stenger, Ingrid, Pinault-Thaury, M.A., et al. · HAL
Works count: 27
Citation count: 139
H-index: 5
I10-index: 4
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