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Kyu Sang Kim
Observed names:
Kyu Sang Kim*,
Kyu-Sang Kim
Institution:
Sangji University
Observed institutions:
Korea Advanced Institute of Science and Technology,
Samsung (South Korea),
LG (South Korea),
CHA University,
Sangji University
ORCID:
0000-0001-6270-8002
Observed ORCID:
0000-0001-6270-8002
OpenAlex ID:
A5011124993
Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements
2014
·
Dong-Pyo Han
, Dong-Guang Zheng
, et al.
·
Applied Physics Letters
·
75
Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode
2013
·
Jong-Hoon Shin
, Jinhong Park
, et al.
·
Applied Physics Letters
·
67
Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes
2014
·
Dong-Pyo Han
, Chan-Hyoung Oh
, et al.
·
Japanese Journal of Applied Physics
·
42
Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes
2014
·
Dong-Pyo Han
, Hyunsung Kim
, et al.
·
Applied Physics Letters
·
34
Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
2016
·
Dong-Pyo Han
, Jong-In Shim
, et al.
·
Applied Physics Express
·
29
Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors
2017
·
Kyu Sang Kim
·
Japanese Journal of Applied Physics
·
27
PDF
Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes
2013
·
Il-Gyun Choi
, Dong-Pyo Han
, et al.
·
Applied Physics Express
·
25
PDF
Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy
2012
·
Jong Hoon Shin
, Young Je Jo
, et al.
·
Applied Physics Letters
·
20
Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes
2012
·
Kyu Sang Kim
, Myoung Gyun Suh
, et al.
·
Applied Physics Letters
·
13
Geographic Information System (GIS) based stability analysis of rock cut slopes
2004
·
Kyu-Sang Kim
, Hyuck-Jin Park
, et al.
·
Geosciences Journal
·
13
Leakage Current Characteristics of Nitride-Based InGaN Light-Emitting Diode
2011
·
Kyu-Sang Kim
, Jin-Ha Kim
, et al.
·
IEEE Photonics Technology Letters
·
10
Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes
2024
·
Jaehyeok Park
, Seokjun Shin
, et al.
·
physica status solidi (a)
·
8
Low temperature studies of the efficiency droop in InGaN-based light-emitting diodes
2014
·
Jong-In Shim
, Hyunsung Kim
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
7
Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density
2021
·
Youn Joon Sung
, Dong-Woo Kim
, et al.
·
Applied Physics Letters
·
6
Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer
2020
·
Seung Yup Jang
, Jaemoo Kim
, et al.
·
Japanese Journal of Applied Physics
·
5
Gate Metal Dependent Reverse Leakage Mechanisms in AlGaN/GaN Schottky Diode
2013
·
Jong-Hoon Shin
, Jinhong Park
, et al.
·
Japanese Journal of Applied Physics
·
4
PDF
Origin of operating voltage increase in deep UV light-emitting diodes with ITO/Al reflector
2021
·
Youn Joon Sung
, Dong-Woo Kim
, et al.
·
Japanese Journal of Applied Physics
·
2
PDF
Study of the ideality factor of blue light-emitting diodes using the photovoltaic characteristics
2015
·
Jae-Hoon Ham
, Chan-Hyoung Oh
, et al.
·
Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
·
1
Comparative Analysis on Internal Quantum, Light–Extraction, Radiative, and Injection Efficiencies in III-Nitride–, III-Phosphide–, and III-Arsenide–based Light-Emitting Devices
2025
·
Ilji Hwang
, Kyu Sang Kim
, et al.
·
Ceramist
PDF
Effect of p-GaN gate/u-GaN Cap Layer on AlGaN/GaN Heterostructure Field Effect Transistors
2024
·
Kyu Sang Kim*
·
New Physics Sae Mulli
Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes
2020
·
Kyu-Sang Kim
, Jong-In Shim
·
Journal of the Korean Physical Society
Effect of nanometer sized Ni dot/Ag/Pt reflection metal of InGaN light emitting diodes on conversion efficiency of yellow phosphor
2015
·
Myoung Gyun Suh
, Kyu Sang Kim
·
Current Applied Physics
Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques
2015
·
Dong-Soo Shin
, Dong-Pyo Han
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Characteristics of InGaN light emitting diode depending on Si-doping on InGaN layers below quantum wells
2013
·
Sung Nae Cho
, Kyu Sang Kim
·
Current Applied Physics
An Extraction Method of Representative Patterns for QA
2009
·
Sunghun Jung
, Yong-Soo Seol
, et al.
·
International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC)
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Works count:
28
Citation count:
388
H-index:
10
I10-index:
11
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