Author

Christoph Henkel

Observed names: C Henkel, C. Henkel, Henkel, Christoph

Observed institutions: TU Wien, X-Fab (Germany), KTH Royal Institute of Technology

ORCID: 0000-0002-1295-7489

Observed ORCID: 0000-0002-1295-7489

OpenAlex ID: A5012087886

A Graphene-Based Hot Electron Transistor

2013 · Sam Vaziri, Grzegorz Lupina, et al. · Nano Letters · 240

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

2009 · S. Abermann, O. Bethge, et al. · Applied Physics Letters · 37

Atomic layer-deposited platinum in high-k/metal gate stacks

2009 · Christoph Henkel, Stephan Abermann, et al. · Semiconductor Science and Technology · 36

Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

2011 · O. Bethge, C. Henkel, et al. · Applied Surface Science · 34

HfO 2 /Al 2 O 3 Bilayered High- k Dielectric for Passivation and Gate Insulator in 4H-SiC Devices

2013 · M. Usman, C. Henkel, et al. · ECS Journal of Solid State Science and Technology · 33

A manufacturable process integration approach for graphene devices

2013 · Sam Vaziri, Grzegorz Lupina, et al. · Solid-State Electronics · 27

Thulium Silicate Interfacial Layer for Scalable High-k/Metal Gate Stacks

2013 · Eugenio Dentoni Litta, Per-Erik Hellstrom, et al. · IEEE Transactions on Electron Devices · 24

Ge p-MOSFETs With Scaled ALD $\hbox{La}_{2} \hbox{O}_{3}/\hbox{ZrO}_{2}$ Gate Dielectrics

2010 · C. Henkel, S. Abermann, et al. · IEEE Transactions on Electron Devices · 24

Scalable Approach for Vertical Device Integration of Epitaxial Nanowires

2009 · A. Lugstein, M. Steinmair, et al. · Nano Letters · 22

Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing

2014 · O. Bethge, C. Zimmermann, et al. · Journal of Applied Physics · 21

High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3and H2O

2013 · Eugenio Dentoni Litta, Per-Erik Hellström, et al. · Journal of The Electrochemical Society · 21

Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

2010 · C. Henkel, S. Abermann, et al. · Microelectronic Engineering · 21

Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality

2010 · Christoph Henkel, Ole Bethge, et al. · Applied Physics Letters · 21

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

2010 · S. Abermann, C. Henkel, et al. · Applied Surface Science · 21

Passivation of SiC device surfaces by aluminum oxide

2014 · A Hallén, M Usman, et al. · IOP Conference Series Materials Science and Engineering · 18

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

2010 · O. Bethge, S. Abermann, et al. · Applied Physics Letters · 18

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO 2 high- k gate dielectrics

2009 · S. Abermann, G. Pozzovivo, et al. · Electronics Letters · 18

Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation

2010 · T Burchhart, C Zeiner, et al. · Nanotechnology · 17

Interface engineering of Ge using thulium oxide: Band line-up study

2013 · I.Z. Mitrovic, M. Althobaiti, et al. · Microelectronic Engineering · 16

Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

2012 · A. Alexewicz, C. Ostermaier, et al. · Thin Solid Films · 16

Low temperature atomic layer deposition of high-k dielectric stacks for scaled metal-oxide-semiconductor devices

2009 · Ole Bethge, Stephan Abermann, et al. · Thin Solid Films · 13

In situ SiOx interfacial layer formation for scaled ALD high-k/metal gate stacks

2012 · E. Dentoni Litta, P.-E. Hellstrom, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 11

Reduction of the PtGe/Ge Electron Schottky-Barrier Height by Rapid Thermal Diffusion of Phosphorous Dopants

2010 · Christoph Henkel, Stephan Abermann, et al. · Journal of The Electrochemical Society · 11

CMOS Integrated UV-Photodiodes

2016 · Daniel Gäbler, Christoph Henkel, et al. · Procedia Engineering · 8

Atomic-layer deposited thulium oxide as a passivation layer on germanium

2015 · I. Z. Mitrovic, S. Hall, et al. · Journal of Applied Physics · 8

Works count: 60

Citation count: 812

H-index: 17

I10-index: 23