Get started
Author

Varistha Chobpattana

Observed names: V Chobpattana, V. Chobpattana
ORCID: 0000-0001-7611-0730
Observed ORCID: 0000-0001-7611-0730
OpenAlex ID: A5012811078
Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities
2013 · Varistha Chobpattana, Junwoo Son, et al. · Applied Physics Letters · 81
Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
2012 · Junwoo Son, Varistha Chobpattana, et al. · Applied Physics Letters · 73
0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6Tunnel FET
2014 · Bijesh Rajamohanan, Rahul Pandey, et al. · IEEE Electron Device Letters · 58
Frequency dispersion in III-V metal-oxide-semiconductor capacitors
2012 · Susanne Stemmer, Varistha Chobpattana, et al. · Applied Physics Letters · 55
Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for ultra-low power logic
2015 · R. Pandey, H. Madan, et al. · Symposium on VLSI Technology · 52
Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces
2011 · Greg J. Burek, Yoontae Hwang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 39
The Formation and Utility of Sub-Angstrom to Nanometer-Sized Electron Probes in the Aberration-Corrected Transmission Electron Microscope at the University of Illinois
2010 · Jianguo Wen, James Mabon, et al. · Microscopy and Microanalysis · 33
Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$
2014 · Sanghoon Lee, Cheng-Ying Huang, et al. · IEEE Electron Device Letters · 32
Extremely scaled high- k /In0.53Ga0.47As gate stacks with low leakage and low interface trap densities
2014 · Varistha Chobpattana, Evgeny Mikheev, et al. · Journal of Applied Physics · 26
Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors
2011 · Yoontae Hwang, Varistha Chobpattana, et al. · Applied Physics Letters · 24
The Effect of GO/TiO_2 Thin Film During Photodegradation of Methylene Blue Dye
2021 · Azliza Azani, Dewi Suriyani Che Halin, et al. · Evergreen · 22
Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs
2014 · S. Lee, V. Chobpattana, et al. · Symposium on VLSI Technology · 22
Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
2013 · Varistha Chobpattana, Thomas E. Mates, et al. · Journal of Applied Physics · 22
Scaled ZrO2 dielectrics for In0.53Ga0.47As gate stacks with low interface trap densities
2014 · Varistha Chobpattana, Thomas E. Mates, et al. · Applied Physics Letters · 21
Ammonia modification of activated carbon derived from biomass via gamma irradiation vs. hydrothermal method for methylene blue removal
2022 · Tinutda Phonlam, Bordin Weerasuk, et al. · South African Journal of Chemical Engineering · 19
The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
2015 · Tyler Kent, Kechao Tang, et al. · The Journal of Chemical Physics · 17
In-situ nitrogen plasma passivation of Al2O3/GaN interface states
2015 · Junwoo Son, Varistha Chobpattana, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 17
Low Power III–V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 µA/µm at Ioff=1 nA/µm and VDS=0.5 V
2014 · C. Y. Huang, S. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Gamma Irradiation Synthesis of Sugar-Derived Carbon-Dot-Functionalized Glutathione for Hg 2+ Detection and Antioxidant Activity
2025 · Kanokorn Wechakorn, Pacharaphon Khaopueak, et al. · ACS Omega · 14
PDF
Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0.4Sb0.6/In0.65Ga0.35As heterojunction tunnel FETs
2015 · R. Pandey, N. Agrawal, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Sugar derived-fluorescent carbon quantum dots conjugated glutathione for sensing heavy metal ions and antioxidant activity
2024 · Varistha Chobpattana, Tanagorn Sangtawesin, et al. · Materials Science and Engineering B · 13
Factors of Controlling the Formation of Titanium Dioxide (TiO2) Synthesized using Sol-gel Method – A Short Review
2022 · K. Abdul Razak, D. S. Che Halin, et al. · Journal of Physics Conference Series · 12
PDF
(Invited) Record-Performance In(Ga)As MOSFETS Targeting ITRS High-Performance and Low-Power Logic
2015 · Mark J Rodwell, Cheng-Ying Huang, et al. · ECS Transactions · 11
PDF
Recent graphene oxide/TiO2 thin film based on self-cleaning application
2019 · A Azani, D S Che Halin, et al. · IOP Conference Series Materials Science and Engineering · 10
PDF
Ultrathin InAs-channel MOSFETs on Si substrates
2015 · Cheng-Ying Huang, Xinyu Bao, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 10
Works count: 66
Citation count: 827
H-index: 17
I10-index: 25
Year
Topic
Type