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Author

C. Lacam

Observed names: C Lacam, C. LACAM, Cedric Lacam, Cédric Lacam, Cédric Lacam, LACAM, Cedric, Lacam, Cédric
Institution: III V Lab
Observed institutions: Laboratoire Mécanique des Solides, Laboratoire de Physique des Interfaces et des Couches Minces, United Monolithic Semiconductor (France), Thales (France), III V Lab, Université Grenoble Alpes
ORCID: 0000-0002-0944-9950
Observed ORCID: 0000-0002-0944-9950
OpenAlex ID: A5013731637
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
2018 · Anna Malmros, Piero Gamarra, et al. · IEEE Transactions on Electron Devices · 74
ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
2016 · R. Aubry, J. C. Jacquet, et al. · IEEE Electron Device Letters · 70
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design
2015 · Davide Bisi, Alessandro Chini, et al. · IEEE Electron Device Letters · 57
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Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices
2014 · Piero Gamarra, Cedric Lacam, et al. · Journal of Crystal Growth · 55
InAlGaN/GaN HEMTs at Cryogenic Temperatures
2016 · Ezgi Dogmus, Riad Kabouche, et al. · Electronics · 44
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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure
2015 · Farid Medjdoub, Riad Kabouche, et al. · Applied Physics Express · 32
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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
2015 · Anna Malmros, Piero Gamarra, et al. · IEEE Electron Device Letters · 31
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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
2015 · J Bergsten, A Malmros, et al. · Semiconductor Science and Technology · 29
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 · C. Potier, J-C Jacquet, et al. · European Microwave Conference (EuMC) · 23
Evaluation of an InAlN/AlN/GaN HEMT with Ta‐based ohmic contacts and PECVD SiN passivation
2014 · Anna Malmros, Piero Gamarra, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 23
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Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
2017 · Mehdi Rzin, Jean-Marc Routoure, et al. · IEEE Transactions on Electron Devices · 22
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Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
2015 · Thanh Ngoc Thi Do, Anna Malmros, et al. · IEEE Electron Device Letters · 22
Cl2/Ar based atomic layer etching of AlGaN layers
2019 · Sébastien Aroulanda, Olivier Patard, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 21
In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs
2016 · Piero Gamarra, Cedric Lacam, et al. · Journal of Crystal Growth · 21
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
2015 · D. Bisi, A. Stocco, et al. · Microelectronics Reliability · 20
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Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC
2012 · P. Gamarra, C. Lacam, et al. · Journal of Crystal Growth · 19
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
2017 · Stéphane Piotrowicz, Jean-Claude Jacquet, et al. · International Journal of Microwave and Wireless Technologies · 18
First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
2018 · C. Potier, S. Piotrowicz, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 17
Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope
2012 · G. Naresh‐Kumar, B. Hourahine, et al. · physica status solidi (a) · 16
Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure
2016 · H. Ben Ammar, A. Minj, et al. · physica status solidi (a) · 11
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 · C. Potier, J-C Jacquet, et al. · European Microwave Integrated Circuits Conference · 9
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier
2022 · Z. Gao, F. Chiocchetta, et al. · IEEE International Reliability Physics Symposium proceedings · 7
The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
2019 · Ranim Mohamad, Marie Pierre Chauvat, et al. · Journal of Applied Physics · 7
The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template
2017 · H. BEN AMMAR, A. MINJ, et al. · Journal of Microscopy · 7
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InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz
2016 · S. Piotrowicz, R. Aubry, et al. · European Microwave Integrated Circuits Conference · 7
Works count: 41
Citation count: 700
H-index: 17
I10-index: 20
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