Author

Fabio Bergamini

Observed name: F. Bergamini

Observed institutions: Istituto Nazionale di Fisica Nucleare, Sezione di Bologna, Institute for Microelectronics and Microsystems, University of Bologna

OpenAlex ID: A5015136705

Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions

2006 · A. Poggi, F. Bergamini, et al. · Applied Physics Letters · 30

Ion track formation in low temperature silicon dioxide

2008 · F. Bergamini, M. Bianconi, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 13

Modification of the etching properties of x-cut Lithium Niobate by ion implantation

2007 · M. Bianconi, F. Bergamini, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 13

Waveguide formation by ion implantation in Er doped optical materials

2008 · G.G. Bentini, M. Chiarini, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 12

Wet and vapor etching of tracks produced in SiO2 by Ti ion irradiation

2007 · F. Bergamini, M. Bianconi, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11

Monolithic fully integrated programmable micro-diffraction grating based on electro-optical materials

2007 · G. G. Bentini, A. Parini, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7

Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

2006 · Roberta Nipoti, Fabio Bergamini, et al. · Materials science forum · 7

Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus

2005 · S. Rao, F. Bergamini, et al. · Applied Surface Science · 7

Frequency map analysis of resonances in a nonlinear lattice with space charge

2001 · G. Turchetti, A. Bazzani, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 6

PDF

Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing

2006 · Roberta Nipoti, Alberto Carnera, et al. · MRS Proceedings · 5

A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

2004 · S. Rao, S.E. Saddow, et al. · MRS Proceedings · 5

The micromaps description of a beam with space charge

1999 · F. Bergamini, G. Franchetti, et al. · Nuovo cimento della Società italiana di fisica. A, Nuclei, particles and fields · 5

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes

2008 · Francesco Moscatelli, Fabio Bergamini, et al. · Materials science forum · 2

Ion implantation of silicon at the nanometer scale

2007 · Marco Bianconi, Fabio Bergamini, et al. · Journal of Applied Physics · 2

Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature