Author

A. Tsormpatzoglou

Observed names: A Tsormpatzoglou, ANDREAS TSORMPATZOGLOU, Andreas Tsormpatzoglou, Tsormpatzoglou Andreas, Tsormpatzoglou, A., Tsormpatzoglou, Andreas, Ανδρέας Τσορμπατζόγλου

Institution: University of Ioannina

Observed institutions: University of Ioannina, Aristotle University of Thessaloniki, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Micro and Nanotechnology Innovation Centre, Institut de Microélectronique, Electromagnétisme et Photonique, Institut Néel, Laboratoire d'Électronique des Technologies de l'Information

ORCID: 0009-0004-9182-778X

Observed ORCID: 0009-0004-9182-778X

OpenAlex ID: A5016760353

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 · A. Tsormpatzoglou, C.A. Dimitriadis, et al. · IEEE Transactions on Electron Devices · 102

Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

2008 · A. Tsormpatzoglou, C.A. Dimitriadis, et al. · IEEE Transactions on Electron Devices · 94

Semianalytical Modeling of Short-Channel Effects in Lightly Doped Silicon Trigate MOSFETs

2008 · A. Tsormpatzoglou, C.A. Dimitriadis, et al. · IEEE Transactions on Electron Devices · 75

Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs

2009 · A. Tsormpatzoglou, D.H. Tassis, et al. · Microelectronic Engineering · 58

Compact Model of Drain Current in Short-Channel Triple-Gate FinFETs

2012 · N. Fasarakis, A. Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 57

A compact drain current model of short-channel cylindrical gate-all-around MOSFETs

2009 · A Tsormpatzoglou, D H Tassis, et al. · Semiconductor Science and Technology · 53

Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise

2010 · E. G. Ioannidis, A. Tsormpatzoglou, et al. · Journal of Applied Physics · 45

Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

2011 · Christoforos G. Theodorou, Andreas Tsormpatzoglou, et al. · IEEE Electron Device Letters · 44

Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs

2010 · Eleftherios G. Ioannidis, Andreas Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 41

Compact Modeling of Nanoscale Trapezoidal FinFETs

2014 · Nikolaos Fasarakis, Theano A. Karatsori, et al. · IEEE Transactions on Electron Devices · 37

Analytical unified threshold voltage model of short-channel FinFETs and implementation

2011 · N. Fasarakis, A. Tsormpatzoglou, et al. · Solid-State Electronics · 36

Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

2016 · Theodoros A. Oproglidis, Andreas Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 35

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 · A. Tsormpatzoglou, N. A. Hastas, et al. · Journal of Applied Physics · 35

Symmetrical unified compact model of short-channel double-gate MOSFETs

2011 · K. Papathanasiou, C.G. Theodorou, et al. · Solid-State Electronics · 25

Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs

2010 · A. Tsormpatzoglou, D.H. Tassis, et al. · Solid-State Electronics · 25

Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements

2012 · Andreas Tsormpatzoglou, Nikolaos A. Hastas, et al. · IEEE Electron Device Letters · 23

Electrical characterization and design optimization of FinFETs with a TiN/HfO2gate stack

2009 · A Tsormpatzoglou, D H Tassis, et al. · Semiconductor Science and Technology · 22

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Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

2015 · Theano A. Karatsori, Andreas Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 21

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

2009 · A. Tsormpatzoglou, C.A. Dimitriadis, et al. · Solid-State Electronics · 21

Compact Capacitance Model of Undoped or Lightly Doped Ultra-Scaled Triple-Gate FinFETs

2012 · Nikolaos Fasarakis, Andreas Tsormpatzoglou, et al. · IEEE Transactions on Electron Devices · 19

A Lambert-Function Charge-Based Methodology for Extracting Electrical Parameters of Nanoscale FinFETs

2012 · Andreas Tsormpatzoglou, Konstantinos Papathanasiou, et al. · IEEE Transactions on Electron Devices · 19

Deep levels in silicon Schottky junctions with embedded arrays of β-FeSi2 nanocrystallites

2006 · A. Tsormpatzoglou, D. H. Tassis, et al. · Journal of Applied Physics · 17

Characterization of High-Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors by Low-Frequency Noise Measurements

2013 · Andreas Tsormpatzoglou, Nikolaos A. Hastas, et al. · IEEE Electron Device Letters · 13

Short Channel Effects on LTPS TFT Degradation

2012 · Despina C. Moschou, Christoforos G. Theodorou, et al. · Journal of Display Technology · 13

Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs

2021 · Theodoros A. Oproglidis, Theano A. Karatsori, et al. · IEEE Transactions on Device and Materials Reliability · 12

Works count: 71

Citation count: 1,053

H-index: 19

I10-index: 26