Get started
Author

A. E. Chernyakov

Observed names: A E Chernyakov, A. Chernyakov, A. E. Cherniakov, A.E. Cherniakov, A.E. Chernyakov, A.E.Chernyakov, Anton Chernyakov, Anton E. Chernyakov, Anton Evgenievich Chernyakov, Chernyakov A. E., Chernyakov A.E., Chernyakov, Anton, А Е Черняков, А.Е. Черняков, Черняков, А.Е., Черняков, Антон Евгеньевич
Observed institutions: Russian Academy of Sciences, ITMO University, Saint Petersburg State Electrotechnical University, Nitride Crystals (United States), Submicron Heterostructures for Microelectronics Research and Engineering Center, Ioffe Institute
ORCID: 0000-0002-8153-9512
Observed ORCID: 0000-0002-8153-9512
OpenAlex ID: A5017999760
Nonradiative recombination dynamics in InGaN/GaN LED defect system
2008 · A.E. Chernyakov, M.M. Sobolev, et al. · Superlattices and Microstructures · 43
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
2010 · W.V. Lundin, A.E. Nikolaev, et al. · Journal of Crystal Growth · 37
Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high‐power flip‐chip LEDs
2013 · A. E. Chernyakov, K. A. Bulashevich, et al. · physica status solidi (a) · 34
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy
2010 · A. L. Zakgeim, G. L. Kuryshev, et al. · Semiconductors · 22
Two channels of non-radiative recombination in InGaN/GaN LEDs
2009 · N.S. Averkiev, A.E. Chernyakov, et al. · Physica B Condensed Matter · 21
Extended defect system as a main source of non‐radiative recombination in InGaN/GaN LEDs
2012 · Evgeniia Shabunina, Nikita Averkiev, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16
Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs
2012 · A. L. Zakheim, M. E. Levinshtein, et al. · Semiconductors · 14
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
2017 · A. L. Zakgeim, N. D. Il’inskaya, et al. · Semiconductors · 13
Lumen and chromaticity maintenance lifetime prediction for LED lamps using a spectral power distribution method
2015 · C. Qian, J. J. Fan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 13
Failure mechanisms in blue InGaN/GaN LEDs for high power operation
2012 · A.E. Chernyakov, M.E. Levinshtein, et al. · Microelectronics Reliability · 12
Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs
2014 · A.E. Chernyakov, M.E. Levinshtein, et al. · Journal of Crystal Growth · 11
Mechanisms behind efficiency droop and degradation in InGaN/GaN LEDs
2013 · Natalia Shmidt, Andrew Greshnov, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10
Thermal resistanse and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes
2015 · A.V. Aladov, K.A. Bulashevich, et al. · St Petersburg Polytechnical University Journal Physics and Mathematics · 9
PDF
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
2016 · V. N. Petrov, V. G. Sidorov, et al. · Semiconductors · 8
Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount
2013 · L. K. Markov, I. P. Smirnova, et al. · Semiconductors · 8
Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm
2009 · A. L. Zakhgeim, N. V. Zotova, et al. · Semiconductors · 8
Enhanced highly thermal-humidity reliability of (Sr,Ca)AlSiN 3 :Eu 2+ phosphors via rapid plasma-assisted silica surface coating
2025 · Changran Zheng, Baotong Guo, et al. · Optics Express · 7
The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells
2019 · N.M. Shmidt, A.E. Chernyakov, et al. · Journal of Crystal Growth · 7
Peculiarities of defect generation under injection current in LEDs based on group‐III nitride3N nanostructures
2015 · Natalia Shmidt, Evgeniia Shabunina, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 7
InGaN/GaN short‐period superlattices: synthesis, properties, applications
2011 · A. F. Tsatsulnikov, W. V. Lundin, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 7
High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
2010 · W. V. Lundin, A. E. Nikolaev, et al. · Technical Physics Letters · 7
Features of Operation of High-Power AlInGaN LEDs at High Pulse Currents
2021 · A. L. Zakgeim, A. E. Ivanov, et al. · Technical Physics Letters · 6
Infrared micro-thermography of high-power AlInGaN LEDs using high emissivity (black) in IR and transparent in the visible spectral region coating
2019 · A. Aladov, A. Chernyakov, et al. · Quantitative InfraRed Thermography Journal · 6
The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
2016 · V. V. Emtsev, E. E. Zavarin, et al. · Technical Physics Letters · 6
Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy
2015 · Natalia Shmidt, Alexander Usikov, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
Works count: 120
Citation count: 466
H-index: 11
I10-index: 12
Year
Topic
Type