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Justine Barbot

Observed names: Barbot, Justine, J. Barbot
Institution: X-Fab (Germany)
ORCID: 0009-0007-3895-7229
Observed ORCID: 0009-0007-3895-7229
OpenAlex ID: A5019331608
16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
2021 · T. Francois, J. Coignus, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 46
High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays
2022 · T. Francois, J. Coignus, et al. · IEEE Transactions on Electron Devices · 31
Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions
2022 · R. Fontanini, J. Barbot, et al. · IEEE Journal of the Electron Devices Society · 29
Ferroelectric Tunneling Junctions for Edge Computing
2021 · Erika Covi, Quang T. Duong, et al. · IEEE International Symposium on Circuits and Systems proceedings · 21
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions
2021 · R. Fontanini, J. Barbot, et al. · European Solid-State Device Research Conference · 14
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)
2023 · L. Grenouillet, J. Barbot, et al. · IEEE International Reliability Physics Symposium proceedings · 10
Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions
2023 · J. Barbot, R. Fontanini, et al. · Journal of Applied Physics · 6
Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory
2025 · David Lehninger, Ayse Sünbül, et al. · IEEE International Memory Workshop (IMW) · 4
Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements
2022 · Justine Barbot, Jean Coignus, et al. · European Solid-State Circuits Conference (ESSCIRC) · 4
Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide
2024 · Sorin Cristoloveanu, Etienne Nowak, et al. · Solid-State Electronics · 3
Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM Application
2024 · David Lehninger, Ayse Sünbül, et al. · Non-Volatile Memory Technology Symposium · 2
Synergetic FeRAM/OxRAM memory array operation induced by oxygen vacancy interface engineering in Si:HfO2 ferroelectric films
2023 · Laurent Grenouillet, Simon Martin, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
Electrical Assessment of Scaled HfO2-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration
2022 · Justine Barbot, Jean Coignus, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
Data Retention in Co-Doped Hzo Fecaps: Roles of Fe Thickness and Thermal Budget
2025 · Justine Barbot, Markus Peller, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 1
Ferroelectric HZO Capacitor on CoSi 2 Electrode: Exploring CMOS-Compatible Alternative to TiN and W
2026 · Justine Barbot, Hee Eng Gek, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Enhanced Ferroelectricity in $\text{Hf}_{0.5} \text{Zr}_{0.5} \mathrm{O}_{2}$ Thin Films by NLA at Intermediate Laser Energy Density
2025 · David Lehninger, Tianren Zhang, et al. · IEEE International Conference on IC Design and Technology (ICICDT)
Integration und Demonstration der 1T1C FeMFET Speichertechnologie für In-Memory-Computing-Anwendungen
2025 · Seidel, Konrad, Lehninger, David, et al. · Fraunhofer-Publica (Fraunhofer-Gesellschaft)
Electrical Characterization of Ferroelectric Tunnel Junctions based on Hafnium Oxide for Neuromorphic Applications
2023 · Justine Barbot · theses.fr (ABES)
Works count: 19
Citation count: 175
H-index: 6
I10-index: 6
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