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M. Swanenberg

Observed names: M. J. Swanenberg, M.J. Swanenberg, Maarten Swanenberg
OpenAlex ID: A5022121378
Advanced BCD technology for automotive, audio and power applications
2007 · Piet Wessels, Maarten Swanenberg, et al. · Solid-State Electronics · 81
A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications
2002 · J.A. van der Pol, A.W. Ludikhuize, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 62
MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation
2004 · N.V.T. D'Halleweyn, J. Benson, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 25
Modelling of High-Voltage SOI-LDMOS Transistors including Self-Heating
2001 · W. J. Kloosterman, M. J. Swanenberg · Springer eBooks · 17
Advanced 100V, 0.13 gm BCD process for next generation automotive applications
2006 · P. Wessels, M. Swanenberg, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13
Applying DMOSTs, diodes and thyristors above and below substrate in thin-layer SOI
2004 · M.J. Swanenberg, A.W. Ludikhuize, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 10
Extended (180 V) voltage in 0.6 μm thin-layer-SOI A-BCD3 technology on 1 μm BOX for display, automotive and consumer applications
2003 · A.W. Ludikhuize, J.A. van der Pol, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 10
Hot carrier degradation of HV-SOI devices under off-and on-state current conditions
2011 · R. van Dalen, S. Dhar, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 9
Comparison of electrical techniques for temperature evaluation in power MOS transistors
2013 · A. Ferrara, P. G. Steeneken, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 8
Using multiplication to evaluate HCI degradation in HV-SOI devices
2010 · R. van Dalen, A. Heringa, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8
Accelerated resistance degradation in aluminum by pulsed power cycling
2015 · A. Ferrara, J. Claes, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 7
The safe operating volume as a general measure for the operating limits of LDMOS transistors
2013 · A. Ferrara, P. G. Steeneken, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour
2001 · N. D'Halleweyn, J. D. Benson, et al. · ePrints Soton (University of Southampton) · 3
A Circuit Simulation Model for SOI LDMOS transistors, with accurate High-Side Behaviour
1999 · N. D'Halleweyn, M. Swanenberg, et al. · 1
Novel 3.3V RF-LDMOS in 16nm FinFET with the best RF and reliability trade-off enabling integrated Watt-level power amplifiers in connectivity SoC
2025 · T. V. Dinh, N. Pronin, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Development of high-side capable thyristors in thin SOI technology
2013 · I. M. Emmerik-Weijland, R. van Dalen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
Advanced 100V, 0.13gmBCDprocess fornext generation automotive applications
2006 · M. Swanenberg
A Circuit Simulation Model for Silicon-on-Insulator LDMOS Transistors, with accurate Simulation of High Side Behaviour
1999 · N. D'Halleweyn, M. Swanenberg, et al. · ePrints Soton (University of Southampton)
Works count: 18
Citation count: 259
H-index: 8
I10-index: 7
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