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B. Grimbert

Punch-through in short-channel AlGaN/GaN HFETs
2006 · M.J. Uren, K.J. Nash, et al. · IEEE Transactions on Electron Devices · 234
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
2005 · D. Ducatteau, A. Minko, et al. · IEEE Electron Device Letters · 131
First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz
2012 · F. Medjdoub, M. Zegaoui, et al. · IEEE Electron Device Letters · 94
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
2006 · A. Sozza, C. Dua, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 90
Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
2011 · Farid Medjdoub, Malek Zegaoui, et al. · Applied Physics Express · 86
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
2013 · Paul Sangaré, Guillaume Ducournau, et al. · Journal of Applied Physics · 76
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Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators
2009 · Marc Faucher, Bertrand Grimbert, et al. · Applied Physics Letters · 61
Searching for THz Gunn oscillations in GaN planar nanodiodes
2012 · A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, et al. · Journal of Applied Physics · 59
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AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz
2004 · A. Minko, V. Hoel, et al. · IEEE Electron Device Letters · 54
Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
2013 · Farid Medjdoub, Bertrand Grimbert, et al. · Applied Physics Express · 46
Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS
2012 · M. Gassoumi, B. Grimbert, et al. · Semiconductors · 46
Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate
2011 · Farid Medjdoub, N. Waldhoff, et al. · IEEE Electron Device Letters · 46
Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
2011 · Farid Medjdoub, Malek Zegaoui, et al. · Applied Physics Express · 35
High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure
2015 · Farid Medjdoub, Riad Kabouche, et al. · Applied Physics Express · 32
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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz
2012 · F. Medjdoub, Y. Tagro, et al. · IEEE Electron Device Letters · 32
GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV
2015 · N. Herbecq, I. Roch‐Jeune, et al. · Electronics Letters · 29
The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates
2010 · M. Gassoumi, M.M. Ben Salem, et al. · Microelectronic Engineering · 29
Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design
2006 · G. Soubercaze-Pun, J.G. Tartarin, et al. · IEEE MTT-S International Microwave Symposium digest · 29
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Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers
2005 · De Jaeger, J.C., Delage, S. L., et al. · AMS Acta (University of Bologna) · 25
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First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications
2013 · Gaudenzio Meneghesso, Matteo Meneghini, et al. · IEEE Transactions on Device and Materials Reliability · 20
Photonic band gap material for integrated photonic application: technological challenges
2002 · M. François, J. Danglot, et al. · Microelectronic Engineering · 20
Nonlinear nanochannels for room temperature terahertz heterodyne detection
2013 · Jeremie Torres, Philippe Nouvel, et al. · Semiconductor Science and Technology · 18
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Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT
2005 · A. Sozza, C. Dua, et al. · Electronics Letters · 18
Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs
2012 · Fanny Berthet, Yannick Guhel, et al. · Solid-State Electronics · 17
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
2018 · H Sánchez-Martín, S Sánchez-Martín, et al. · Semiconductor Science and Technology · 16
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Works count: 104
Citation count: 1,531
H-index: 20
I10-index: 32
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