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Tadasu Hosokura

Observed names: T Hosokura, T. Hosokura, Tadasu HOSOKURA, 匡 細倉
Institution: Murata (Japan)
ORCID: 0009-0005-5485-142X
Observed ORCID: 0009-0005-5485-142X
OpenAlex ID: A5024179492
Measurement of the dielectric constant of thin films by terahertz time-domain spectroscopic ellipsometry
2011 · Naoki Matsumoto, Tadasu Hosokura, et al. · Optics Letters · 87
Analysis of Dielectric Response of TiO2 in Terahertz Frequency Region by General Harmonic Oscillator Model
2008 · Naoki Matsumoto, Tadasu Hosokura, et al. · Japanese Journal of Applied Physics · 50
Preparation of Barium Titanate with Patterned Microstructure by a Novel Electrophoretic Deposition Method
2005 · T. Hosokura, Y. Sakabe, et al. · Journal of Sol-Gel Science and Technology · 20
(100)-Oriented SrTiO3/BaTiO3 Artificial Superlattices Fabricated by Chemical Solution Deposition
2011 · Tadasu Hosokura, Naoki Iwaji, et al. · Crystal Growth & Design · 15
Orientation-controlled BaTiO 3 thin films fabricated by chemical solution deposition
2015 · Tadasu Hosokura, Akira Ando, et al. · RSC Advances · 13
Variable-area capacitors controlled by HfO2-based ferroelectric-gate field-effect transistors
2022 · Takaaki Miyasako, Shingo Yoneda, et al. · Applied Physics Letters · 12
Charge injection and decay of nanoscale dielectric films resolved via dynamic scanning probe microscopy
2021 · Thomas J. Moran, Keigo Suzuki, et al. · Journal of the American Ceramic Society · 12
High dielectric permittivity of HfO 2 -based films with (La,Bi,Nb) substitution
2018 · Shingo Yoneda, Tadasu Hosokura, et al. · Japanese Journal of Applied Physics · 12
Effect of surface charges on the polarization of BaTiO 3 thin films investigated by UHV ‐ SPM
2018 · Keigo Suzuki, Tadasu Hosokura, et al. · Journal of the American Ceramic Society · 10
Fabrication and Electrical Characterization of Epitaxially Grown (Ba,Sr)TiO3 Thin Films Prepared by Sol-Gel Method
2006 · Tadasu Hosokura, Akira Ando, et al. · Key engineering materials · 9
Nonlinear polarization responses of ZrO 2 -based thin films fabricated by chemical solution deposition
2017 · Shingo Yoneda, Tadasu Hosokura, et al. · Japanese Journal of Applied Physics · 8
Fabrication and Characterization of a (100) Three‐Axis‐Oriented Single‐Crystal (Ba 0.7 Sr 0.3 )TiO 3 Thin Film Prepared by the Chemical Solution Deposition Method
2008 · Tadasu Hosokura, Keisuke Kageyama, et al. · Journal of the American Ceramic Society · 6
Impact of ambient moisture on gate controllability in ferroelectric-gate field-effect transistors with bottom-gate geometry
2024 · Sang-Gyu Koh, Takaaki Miyasako, et al. · Japanese Journal of Applied Physics · 5
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Dielectric properties of (Ba,Sr)TiO3 thin films with varied microstructures prepared by the chemical solution deposition method for thin-film capacitors and ferroelectric varactors
2010 · K Kageyama, T Hosokura, et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 4
Ferroelectric-gated variable-area capacitors with large capacitance tuning ratio using Ce-doped HfO2 film for both gate insulator and capacitor layer
2023 · Takaaki Miyasako, Shingo Yoneda, et al. · Japanese Journal of Applied Physics · 3
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(100) Three‐Axis‐Oriented BaTiO 3 Thin Film with BaZrO 3 Buffer Layer on MgO(100) Prepared by Chemical Solution Deposition Method
2009 · Tadasu Hosokura, Keisuke Kageyama, et al. · Journal of the American Ceramic Society · 3
Robust Ferroelectricity in Micrometer–Thick Ce:HfO 2 Films
2025 · Takaaki Miyasako, Saki Ishihara, et al. · Advanced Electronic Materials · 1
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Synaptic Device for Neuromorphic Systems Integrating Ferroelectric-Gate Field Effect Transistor and Capacitor
2024 · Kazuki Sawai, Taiga Hirano, et al. · International Workshop on Active-Matrix Flatpanel Displays and Devices · 1
Preparation of Barium Titanate Patterned Microstructures by a Novel Sol-Electrodeposition Method Using a Highly Concentrated Alkoxide Solution
2003 · Tadasu Hosokura, Satoshi Shindo, et al. · Key engineering materials · 1
A Highly Scalable and Noise-Robust Direct Digital Readout (DDRO) for E-Skin Temperature Sensor Arrays Achieving 12.2 pJ/Sensor and 710 ns/Row
2026 · Kosuke Kayano, Sang-Gyu Koh, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Hardware Emulation of Membrane Potential Using a 1T1C FeFET–Capacitor Structure for Neuromorphic Applications
2026 · Kazuki Sawai, Riku Horio, et al. · IEEE Transactions on Electron Devices
Ultra-Low-Energy Architecture of Temperature Sensor Sheet Integrating Phase-Transition Materials and Digital Circuits
2025 · Kosuke Kayano, Sang-Gyu Koh, et al. · International Conference on Solid State Devices and Materials (SSDM)
HfO2-based ferroelectric-gated variable-area capacitors
2022 · Takaaki Miyasako, Shingo Yoneda, et al. · International Conference on Solid State Devices and Materials (SSDM)
Nanoscale characterization of ferroelectric materials by scanning probe microscope under ultrahigh vacuum
2014 · Keigo Suzuki, Takafumi Okamoto, et al. · IEEE International Symposium on Applications of Ferroelectrics (ISAF)
Nanoscale characterization of ferroelectric materials by scanning probe microscope under ultrahigh vacuum
2014 · Keigo Suzuki, Takafumi Okamoto, et al. · International Conference on Electronic Packaging Technology (ICEPT)
Works count: 31
Citation count: 272
H-index: 9
I10-index: 9
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