Get started
Author

Ryota Hodo

Observed name: R. Hodo
ORCID: 0000-0001-7291-5515
Observed ORCID: 0000-0001-7291-5515
OpenAlex ID: A5024882936
3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm
2019 · Masashi Oota, Yoshinori Ando, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 64
30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics
2015 · S. Matsuda, T. Hiramatsu, et al. · Symposium on VLSI Technology · 38
5,291‐ppi OLED display enabled by monolithic integration of C‐axis‐aligned crystalline IGZO FET and Si CMOS
2022 · Kiyoshi Kato, Hidetomo Kobayashi, et al. · Journal of the Society for Information Display · 21
Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology
2021 · H. Baba, S. Ohshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography
2023 · Yasumasa Yamane, Nozomu Sugisawa, et al. · SID Symposium Digest of Technical Papers · 14
10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
2022 · Toshihiko Saito, Toshiki Mizuguchi, et al. · SID Symposium Digest of Technical Papers · 14
32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
2022 · Munehiro Kozuma, Yuki Okamoto, et al. · SID Symposium Digest of Technical Papers · 12
5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS
2021 · Kiyoshi Kato, Hidetomo Kobayashi, et al. · Proceedings of the International Display Workshops · 9
C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming
2022 · Shunpei Yamazaki, Kiyoshi Kato, et al. · Ceramics International · 8
27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
2022 · Ryota Hodo, Satoru Saito, et al. · SID Symposium Digest of Technical Papers · 8
(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI
2021 · Hitoshi Kunitake, Haruyuki Baba, et al. · ECS Transactions · 5
PDF
Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
2025 · Shunpei Yamazaki, Tatsuya Onuki, et al. · International Journal of Ceramic Engineering & Science · 4
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET
2024 · Hiromi Sawai, Motomu Kurata, et al. · Japanese Journal of Applied Physics · 3
Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit
2023 · Hiromi Sawai, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Oxide Ceramics Large‐Scale Integration Devices to Mitigate Global Extreme Weather Due to Computers in the AI Era
2026 · Shunpei Yamazaki, Tatsuya Onuki, et al. · International Journal of Ceramic Engineering & Science
OLED Display with All Pixels Formed through RGB Side-by-side Patterning by Photolithography
2023 · Yasumasa Yamane, Nozomu Sugisawa, et al. · Proceedings of the International Display Workshops
1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS
2022 · Minato Ito, Munehiro Kozuma, et al. · Proceedings of the International Display Workshops
Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer
2022 · MASAHIRO WAKUDA, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM)
Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm
2022 · Hitoshi Kunitake, Kazuki Tsuda, et al. · Research Square
PDF
(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI
2021 · Hitoshi Kunitake, Haruyuki Baba, et al. · ECS Meeting Abstracts
Reliability of 60-nm scale CAAC-IGZO FET
2018 · H. Kimura, D. Shimada, et al. · International Conference on Solid State Devices and Materials (SSDM)
Loading Effect in the Channel Etching Process of Crystalline In-Ga-Zn-Oxide FETs
2018 · R. Arasawa, S. Sasagawa, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 23
Citation count: 224
H-index: 8
I10-index: 7
Year
Topic
Type