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Rajab Yahyazadeh
Observed names:
R. Yahyazadeh,
Yahyazadeh Sadagiyani, Rajab
Institution:
Islamic Azad University, Khoy Branch
Observed institutions:
Islamic Azad University, Tehran,
Islamic Azad University, Science and Research Branch,
Islamic Azad University Central Tehran Branch,
Islamic Azad University, Khoy Branch
ORCID:
0000-0002-9832-4403
Observed ORCID:
0000-0002-9832-4403
OpenAlex ID:
A5029170438
Stability analysis of FGM microgripper subjected to nonlinear electrostatic and temperature variation loadings
2014
·
Reza Jahanghiry
, Rajab Yahyazadeh
, et al.
·
Science and Engineering of Composite Materials
·
29
PDF
The effects of depletion layer on negative differential conductivity in AlGaN/GaN high electron mobility transistor
2006
·
R. Yahyazadeh
, A. Asgari
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
9
Effect of hydrostatic pressure on the photocurrent density of $${\mathbf{InGaN/GaN}}$$ multiple quantum well solar cells
2021
·
R. Yahyazadeh
·
Indian Journal of Physics
·
8
Effect of hydrostatic pressure on the radiative current density of InGaN/GaN multiple quantum well light emitting diodes
2021
·
Rajab Yahyazadeh
·
Optical and Quantum Electronics
·
6
Numerical modeling of electronic and electrical characteristics of InGaN/GaN multiple quantum well solar cells
2020
·
Rajab Yahyazadeh
·
Journal of Photonics for Energy
·
6
Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS
2019
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Journal of Science and Technology
·
3
PDF
Effect of temperature on the transconductance of AlGaN/GaN high electron mobility transistors (HEMT)
2013
·
Rajab Yahyazadeh
, Zahra Hashempour
, et al.
·
International Journal of Academic Research
·
3
Shockley-Read-Hall current density in InGaN/GaN multiple-quantum-well light-emitting diodes under hydrostatic pressure
2025
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Optical and Quantum Electronics
·
2
Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure
2023
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Indian Journal of Physics
·
2
Optical gain of AlGaN/GaN multiquantum well laser diode influenced by hydrostatic pressure
2021
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Journal of Nanophotonics
·
2
Effect of Hydrostatic Pressure and Temperature on Quantum Confinement of AlGaN/GaN HEMTs
2021
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Journal of Science and Technology
·
2
PDF
Numerical Performance of AlGaN/GaN High Electron Mobility TransistorsunderHydrostatic Pressure and Temperature
2020
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Journal of Science and Technology
·
2
PDF
Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors
2019
·
Rajab Yahyazadeh
·
2
Effect of Temperature on the Total Mobility of AlGaN/GaN High Electron Mobility Transistors
2014
·
Rajab Yahyazadeh
·
ECS Transactions
·
2
PDF
Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)
2010
·
R. Yahyazadeh
, Z. Hashempour
·
IEEE International Conference on Microelectronics (MIEL)
·
2
Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode
2023
·
Rajab Yahyazadeh
, Zahra Hashempour
·
Journal of Nanophotonics
·
1
PDF
The effect of hydrostatic pressure on the radiative recombination rate of InGaN/GaN multiple quantum well solar cells
2021
·
Rajab Yahyazadeh
, Zahra Hashempour
·
1
Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells
2021
·
Rajab Yahyazadeh
, Zahra Hashempour
·
DOAJ (DOAJ: Directory of Open Access Journals)
·
1
Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells
2020
·
Rajab Yahyazadeh
, Zahra Hashempour
·
DOAJ (DOAJ: Directory of Open Access Journals)
·
1
Effect of AlGaN Barrier Thickness on the Transconductance of AlGaN/GaN High Electron Mobility Transistors
2014
·
Rajab Yahyazadeh
·
ECS Transactions
·
1
Analytical-Numerical Model for the Total Mobility of AlGaN/GaN High Electron Mobility Transistors
2012
·
Rajab Yahyazadeh
, Zahra Hashempour
·
ECS Transactions
·
1
PDF
The effect of depletion layer on the cut off frequency of AlGaN/GaN high electron mobility transistors
2010
·
R. Yahyazadeh
, Z. Hashempour
·
IEEE International Conference on Microelectronics (MIEL)
·
1
Numerical investigation of Shockley–Read–Hall current density in InGaN/GaN multiple-quantum-well solar cells under temperature and hydrostatic pressure
2026
·
Rajab Yahyazadeh
·
Indian Journal of Physics
Internal quantum efficiency in InGaN/GaN multiple-quantum-well light-emitting diodes under temperature and hydrostatic pressure
2025
·
Yahyazadeh Sadagiyani, Rajab
, Hashempour, Zahra
·
Journal of Optoelectronical Nanostructures
Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs
2021
·
Rajab Yahyazadeh
, Zahra Hashempour
·
International Journal of Integrated Engineering
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Works count:
32
Citation count:
88
H-index:
5
I10-index:
1
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