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Author

Dong‐Ru Hsieh

Observed names: Dong Ru Hsieh, Dong-Ru Hsieh
ORCID: 0009-0003-9979-4196
Observed ORCID: 0009-0003-9979-4196
OpenAlex ID: A5030712635
Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric Hf x Zr 1-x O 2 Negative Capacitance FETs With Internal Metal Gate and NH 3 Plasma Nitridation
2022 · Chia-Chin Lee, Dong-Ru Hsieh, et al. · IEEE Transactions on Electron Devices · 24
Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics
2023 · Yan-Kui Liang, Wei-Li Li, et al. · IEEE Electron Device Letters · 22
Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)
2023 · Yan-Kui Liang, June-Yang Zheng, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 20
High-Performance Pi-Gate Poly-Si Junctionless and Inversion Mode FET
2016 · Dong-Ru Hsieh, Jer-Yi Lin, et al. · IEEE Transactions on Electron Devices · 20
First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics
2023 · Yan-Kui Liang, Jun-Yang Zheng, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Role of Nitrogen in Ferroelectricity of Hf x Zr1-x O2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal Structure
2022 · Dong-Ru Hsieh, Chia-Chin Lee, et al. · IEEE Transactions on Electron Devices · 15
Comprehensive Analysis on Electrical Characteristics of Pi-Gate Poly-Si Junctionless FETs
2017 · Dong-Ru Hsieh, Jer-Yi Lin, et al. · IEEE Transactions on Electron Devices · 15
Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel
2024 · Yan-Kui Liang, Jun-Yang Zheng, et al. · IEEE Transactions on Electron Devices · 10
Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs
2018 · Dong-Ru Hsieh, Yi-De Chan, et al. · IEEE Journal of the Electron Devices Society · 10
In Situ O₂ Plasma-Treated HfO₂–ZrO₂ Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance Performance
2024 · Dong-Ru Hsieh, Zi-Yang Hong, et al. · IEEE Transactions on Electron Devices · 8
Reliability of p-Type Pi-Gate Poly-Si Nanowire Channel Junctionless Accumulation-Mode FETs
2021 · Dong-Ru Hsieh, Kun-Cheng Lin, et al. · IEEE Transactions on Electron Devices · 7
HfO₂–ZrO₂ Superlattice HZO Ultrathin Poly-Si Channel (3.5 nm) Junctionless FeTFTs Exhibiting Superior Endurance and Robust Retention
2025 · Dong-Ru Hsieh, Zi-Yang Hong, et al. · IEEE Transactions on Electron Devices · 6
Investigation of Two Bits With Multistate Antifuse on nMOS Poly-Silicon Junctionless GAA OTP
2021 · Chen-Feng Chang, Chiuan-Huei Shen, et al. · IEEE Transactions on Electron Devices · 6
Investigation of HfO2 and ZrO2 Nanolamination Thickness on Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance
2024 · Dong-Ru Hsieh, Zi-Yang Hong, et al. · IEEE Silicon Nanoelectronics Workshop · 4
Investigation of Nitrous Oxide Nitridation Temperatures on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode TFTs
2019 · Dong-Ru Hsieh, Kun-Cheng Lin, et al. · IEEE Journal of the Electron Devices Society · 4
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Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer
2024 · Yan-Kui Liang, Wei-Li Li, et al. · IEEE Transactions on Electron Devices · 3
Reliability of Multiple-Layer Stacked Gate-All-Around Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3 Plasma Treatment
2023 · Dong-Ru Hsieh, Chia-Chin Lee, et al. · IEEE Transactions on Electron Devices · 3
Investigation of In-Sn-Zn Composition on the Characterization of Submicron Channel Length Ultra-Thin Atomic Layer Deposited InSnZnO Channel Transistors
2024 · Yan-Kui Liang, Li-Chi Peng, et al. · IEEE Silicon Nanoelectronics Workshop · 2
Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics
2023 · Dong-Ru Hsieh, Jia-Chian Ni, et al. · Silicon Nanoelectronics Workshop (SNW) · 2
Single‐Gate In‐Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching
2023 · Ching‐Hung Chen, Yu‐Ting Lai, et al. · Advanced Materials · 2
Investigation of NH3 Plasma Nitridation on Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel FeFETs
2022 · Dong-Ru Hsieh, Chia-Chin Lee, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 2
High-performance sidewall damascened tri-gate poly-si TFTs with the strain proximity free technique and stress memorization technique
2017 · Dong-Ru Hsieh, Po-Yi Kuo, et al. · Semiconductor Science and Technology · 2
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Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention
2024 · Dong-Ru Hsieh, Jia-Chian Ni, et al. · IEEE Transactions on Electron Devices · 1
Optimization of Ferroelectricity in Al-Doped HfO2 Capacitors: Electrical and Endurance Characteristics
2023 · Dong-Ru Hsieh, Huai-En Luo, et al. · Silicon Nanoelectronics Workshop (SNW) · 1
Investigation of N2O Gas-Treated Interfacial Layer and ZrO2 Seed Layer on Ferroelectricity and Memory Window of UTB HZO FeFETs
2026 · Dong-Ru Hsieh, Hsin-Yu Chen, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 32
Citation count: 204
H-index: 9
I10-index: 9
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