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Katsuki Furukawa
Observed names:
K. Furukawa,
Katsuki FURUKAWA
Institution:
Sharp Corporation (Japan)
Observed institutions:
Osaka Prefecture University,
Sharp Corporation (Japan)
OpenAlex ID:
A5033112299
Characterization of the free-carrier concentrations in doped β-SiC crystals by Raman scattering
1987
·
H. Yugami
, S. Nakashima
, et al.
·
Journal of Applied Physics
·
146
PDF
Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition
1986
·
Akira Suzuki
, Atsuko Uemoto
, et al.
·
Applied Physics Letters
·
82
Epitaxial growth of β-SiC single crystals by successive two-step CVD
1984
·
Akira Suzuki
, Katsuki Furukawa
, et al.
·
Journal of Crystal Growth
·
66
3C-SiC p-n junction diodes
1986
·
K. Furukawa
, A. Uemoto
, et al.
·
Applied Physics Letters
·
50
Electronic properties in p-type GaN studied by Raman scattering
1998
·
H. Harima
, T. Inoue
, et al.
·
Applied Physics Letters
·
39
Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD
1991
·
Akira Suzuki
, Yoshihisa Fujii
, et al.
·
Journal of Crystal Growth
·
27
Insulated-gate and junction-gate FET's of CVD-Grown β-SiC
1987
·
K. Furukawa
, A. Hatano
, et al.
·
IEEE Electron Device Letters
·
22
Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor deposition
1988
·
Akira Suzuki
, Atsuko Ogura
, et al.
·
Journal of Applied Physics
·
19
Bulk Growth of Single-Crystal Cubic Silicon Carbide by Vacuum Sublimation Method
1993
·
Katsuki Furukawa
, Yoshimitsu Tajima
, et al.
·
Japanese Journal of Applied Physics
·
18
PDF
Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β-SiC single crystals grown by chemical vapor deposition
1988
·
Yoshihisa Fujii
, Mitsuhiro Shigeta
, et al.
·
Journal of Applied Physics
·
15
Chemical vapor deposition of single-crystal films of cubic SiC on patterned Si substrates
1989
·
Mitsuhiro Shigeta
, Yoshihisa Fujii
, et al.
·
Applied Physics Letters
·
14
Thermally Stimulated Exoelectron Emission in KCl: Tl, KCl: Cu and Undoped KCl
1981
·
Masao Kamada
, Katsuki Furukawa
, et al.
·
Japanese Journal of Applied Physics
·
11
Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 0, 1533 (1987)]
1987
·
Akira Suzuki
, Atsuko Uemoto
, et al.
·
Applied Physics Letters
·
10
Inclined-epitaxy of β-SiC on Si(n11) substrates (n = 3, 4, 5, 6) by chemical vapor deposition
1988
·
M. Shigeta
, Y. Fujii
, et al.
·
Journal of Crystal Growth
·
9
Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition
1987
·
Mitsuhiro Shigeta
, Kenji Nakanishi
, et al.
·
Applied Physics Letters
·
6
Crystal Growth of β-SiC on Si and Its Application to MOSFETs
1992
·
A. Suzuki
, K. Furukawa
, et al.
·
Springer proceedings in physics
·
4
Optical Studies on AlGaN/InGaN/GaN Single Quantum-Well Structures under External Strains
2001
·
E. Kurimoto
, M. Takahashi
, et al.
·
physica status solidi (b)
·
2
Raman scattering characterization of p-type AlGaN layers
2010
·
Jung Gon Kim
, Hiroaki Yamamoto
, et al.
·
physica status solidi (b)
·
1
Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition
1987
·
Katsuki FURUKAWA
, Atsuko UEMOTO
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
High-Temperature Characteristics of CVD-Grown β-SiC p-n Junction Diodes
1986
·
Akira Suzuki
, Atsuko Uemoto
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
Defect Reduction of Cvd-Grown Cubic SiC Epitaxial Films on Off-Axis Si(100) Substrates with a Novel Off-Direction.
1990
·
Katsuki Furukawa
, Yoshihisa Fujii
, et al.
·
MRS Proceedings
Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).
1988
·
Yoshihisa Fujii
, Atsuko Ogura
, et al.
·
MRS Proceedings
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Works count:
22
Citation count:
543
H-index:
11
I10-index:
13
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