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Jochen Rinderknecht

Observed names: J Rinderknecht, J. Rinderknecht, Rinderknecht, J.
OpenAlex ID: A5034407858
Nano-Raman spectroscopy with metallized atomic force microscopy tips on strained silicon structures
2007 · Liang Zhu, Carsten Georgi, et al. · Journal of Applied Physics · 40
Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy
2011 · Peter Hermann, Michael Hecker, et al. · Ultramicroscopy · 38
Analytics and Metrology of Strained Silicon Structures by Raman and Nano-Raman Spectroscopy
2007 · Michael Hecker, Liang Zhu, et al. · AIP conference proceedings · 24
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Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate
2011 · P. Hermann, M. Hecker, et al. · Journal of Applied Physics · 12
Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal
2006 · S. Waidmann, V. Kahlert, et al. · Microelectronic Engineering · 11
Nano-Scale Analysis Using Synchrotron-Radiation: Applications in the Semiconductor Industry
2008 · Ehrenfried Zschech, Holm Geisler, et al. · Current Nanoscience · 6
Aperture based Raman spectroscopy on SiGe film structures with high spatial resolution
2008 · A. Mai, L. Zhu, et al. · Journal of Raman Spectroscopy · 6
In situ high-temperature synchrotron-radiation diffraction studies of Ni and Co–Ni silicidation processes
2002 · J Rinderknecht, H Prinz, et al. · Microelectronic Engineering · 6
Experimental challenges for approaching local strain determination in silicon by nano-Raman spectroscopy
2007 · Liangdong Zhu, Jacob Atesang, et al. · 5
Effectiveness of Embedded-SiGe in Strained-SOI Substrates and Implications on Embedded-SiGe Stress Transfer Mechanics
2006 · Andy Wei, Thorsten Kammler, et al. · ECS Transactions · 5
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Understanding the materials, electrical and reliability impact of Al-addition to ZrO2 for BEOL compatible MIM capacitors
2014 · Dina H. Triyoso, Sanford Chu, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 4
In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers
2003 · J Rinderknecht, H Prinz, et al. · Microelectronic Engineering · 3
The effect of the second annealing step on the Ni1-xPtx:Si film thermal stability
2017 · X. Pagès, R. Binder, et al. · Microelectronic Engineering · 2
Strain mapping and simulation of transistor structures in a 22nm FDSOI technology
2024 · Dirk Utess, Dominik Martin Kleimaier, et al. · BIO Web of Conferences
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Ni_1 xPt_xに関する第2回アニーリング段階の影響:Si膜の熱安定性【Powered by NICT】
2017 · X Pages, R Binder, et al. · Microelectronic Engineering
Phase formation and size effects in nanoscale silicide layers for the sub-100 nm microprocessor technology
2004 · Jochen Rinderknecht · Qucosa (Saxon State and University Library Dresden)
Works count: 18
Citation count: 162
H-index: 6
I10-index: 5
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