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Leonid F. Makarenko

Observed names: L F Makarenko, L. F. Makarenko, L. Makarenko, L.F Makarenko, L.F. Makarenko, Leonid Makarenko, Makarenko, L. F., Л. Ф. Макаренко, Л.Ф. Макаренко, Макаренко, Л. Ф., Макаренко, Леонид Федорович, Макаренко, Р›.Р¤.
ORCID: 0000-0002-9883-581X
Observed ORCID: 0000-0002-9883-581X
OpenAlex ID: A5034533568
Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy
2015 · R. Radu, I. Pintilie, et al. · Journal of Applied Physics · 106
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Radiation-hard semiconductor detectors for SuperLHC
2005 · M. Bruzzi, J. Adey, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 59
Electrical and Optical Characterization of Thermal Donors in Silicon
1986 · Y. A. I. Latushko, L. F. Makarenko, et al. · physica status solidi (a) · 51
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
2018 · L. F. Makarenko, S. B. Lastovskii, et al. · Journal of Applied Physics · 44
Development of radiation tolerant semiconductor detectors for the Super-LHC
2005 · M. Moll, J. Adey, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 39
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
2005 · E. Fretwurst, J. Adey, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 38
Some new features of thermal donor formation in silicon at T < 800 K
1986 · V. P. Markevich, L. F. Makarenko, et al. · physica status solidi (a) · 33
Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
2019 · Yana Gurimskaya, Pedro Dias de Almeida, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 27
Silicon detectors for the sLHC
2011 · A. Affolder, A. Aleev, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 24
Annealing study of a bistable cluster defect
2009 · Alexandra Junkes, Doris Eckstein, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 21
Reactions of interstitial carbon with impurities in silicon particle detectors
2007 · L. F. Makarenko, M. Moll, et al. · Journal of Applied Physics · 21
Trapping of Minority Carriers in Thermal U − ‐Donors in n‐Si
1988 · L. F. Makarenko, L. I. Murin · physica status solidi (b) · 15
Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+ -p diodes
2014 · L. F. Makarenko, S. B. Lastovskii, et al. · physica status solidi (a) · 14
Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+–p structures
2014 · L. F. Makarenko, S. B. Lastovskii, et al. · AIP conference proceedings · 14
Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
2005 · Lyudmila I. Khirunenko, Yu.V. Pomozov, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 14
Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders
2002 · T. Yang, P. Asenov, et al. · 14
The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
2022 · C. Liao, E. Fretwurst, et al. · IEEE Transactions on Nuclear Science · 13
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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon
2019 · Leonid F. Makarenko, Stanislav B. Lastovski, et al. · physica status solidi (a) · 10
Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures
2009 · L.F. Makarenko, S.B. Lastovski, et al. · Journal of End-to-End-testing · 9
Thermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in Silicon
1989 · V.P. Markevich, L.F. Makarenko, et al. · Materials science forum · 9
Application of DLTS and Laplace-DLTS to defect characterization in high-resistivity semiconductors
2007 · L.F. Makarenko, J.H. Evans-Freeman · Physica B Condensed Matter · 8
Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
2023 · C. Liao, E. Fretwurst, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 7
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Study of Radiation-Induced Defects in p-Type Si1−xGex Diodes before and after Annealing
2020 · Tomas Ceponis, Stanislau Lastovskii, et al. · Materials · 7
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Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon
2014 · L. F. Makarenko, F. P. Korshunov, et al. · Semiconductors · 7
Do we know the energy levels of radiation defects in silicon?
2001 · L.F. Makarenko · Physica B Condensed Matter · 7
Works count: 96
Citation count: 677
H-index: 14
I10-index: 18
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