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Werner Bergholz
Observed names:
Bergholz, W.,
Bergholz, Werner,
Dr. Werner Bergholz,
Prof Werner Bergholz,
W Bergholz,
W. Bergholz,
WERNER BERGHOLZ
show all 7
Observed institutions:
Siemens (Germany),
Infineon Technologies (Germany),
Constructor University,
Aarhus University,
University of Oxford,
IBM (France),
University of Göttingen,
Deutsche Forschungsgemeinschaft
show all 8
ORCID:
0000-0002-0450-8376
Observed ORCID:
0000-0002-0450-8376
OpenAlex ID:
A5035660406
A fast, preparation-free method to detect iron in silicon
1990
·
G. Zoth
, W. Bergholz
·
Journal of Applied Physics
·
382
Impact of the electronic structure on the solubility and diffusion of 3dtransition elements in silicon
1990
·
D. Gilles
, W. Schröter
, et al.
·
Physical review. B, Condensed matter
·
132
An FT-IR study of silicon dioxides for VLSI microelectronics
1990
·
W Bensch
, W Bergholz
·
Semiconductor Science and Technology
·
74
PDF
A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption
1989
·
W. Bergholz
, M. J. Binns
, et al.
·
Philosophical Magazine B
·
74
Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?
1985
·
W. Bergholz
, J. L. Hutchison
, et al.
·
Journal of Applied Physics
·
72
Diffusion of manganese in silicon studied by deep-level transient spectroscopy and tracer measurements
1986
·
D. Gilles
, W. Bergholz
, et al.
·
Journal of Applied Physics
·
47
The Gettering of Transition Metals by Oxygen‐Related Defects in Silicon
1990
·
Robert Falster
, Werner Bergholz
·
Journal of The Electrochemical Society
·
45
New oxygen donors in silicon
1989
·
G. Pensl
, M. Schulz
, et al.
·
Applied Physics A
·
33
Impact of Research on Defects in Silicon on the Microelectronic Industry
2000
·
W. Bergholz
, D. Gilles
·
physica status solidi (b)
·
30
Precipitation of cobalt in silicon studied by Mössbauer spectroscopy
1978
·
W. Bergholz
, W. Schröter
·
physica status solidi (a)
·
24
Defect-related gate oxide breakdown
1989
·
W. Bergholz
, W. Mohr
, et al.
·
Materials Science and Engineering B
·
22
On the diffusion of Co in Si and its applicability to the Si intrinsic defect problem
1981
·
W Bergholz
·
Journal of Physics D Applied Physics
·
20
Implantation Defects Below Mask Edges in Silicon: Structure and Effect on Devices
1993
·
H. Cerva
, W. Bergholz
·
Journal of The Electrochemical Society
·
19
Pairing reactions of interstitial cobalt and shallow acceptors in silicon observed in Mössbauer spectroscopy
1983
·
W. Bergholz
·
Physica B+C
·
18
Investigation of oxide particles in Czochralski silicon heat treated for intrinsic gettering using scanning infrared microscopy
1989
·
Z. Laczik
, G. R. Booker
, et al.
·
Applied Physics Letters
·
15
Methodological problems of SARS-CoV-2 rapid point-of-care tests when used in mass testing
2021
·
Oliver Hirsch
, Werner Bergholz
, et al.
·
AIMS Public Health
·
13
A Dislocation Formation Model of Trench‐Induced Dislocations in Dynamic Random Access Memories
1996
·
M. Dellith
, G. R. Booker
, et al.
·
Journal of The Electrochemical Society
·
13
PDF
Gap States in Small Molecule Thin‐Film Transistors
2015
·
Anita Risteska
, Javier Bedolla
, et al.
·
Advanced Electronic Materials
·
12
Mechanism of phosphorus diffusion gettering of cobalt in silicon studied by Mössbauer spectroscopy
1985
·
A. G. Shaikh
, W. Schröter
, et al.
·
Journal of Applied Physics
·
12
Mössbauer Spectroscopical and Electron Microscopical Investigations of the Behaviour of Cobalt in Silicon
1984
·
M. Pasemann
, W. Bergholz
, et al.
·
physica status solidi (a)
·
12
Impact of Defects on the Technology of Highly Integrated Circuits
1989
·
Bernd O. Kolbesen
, Werner Bergholz
, et al.
·
Materials science forum
·
10
A mössbauer-spectroscopy study of the annealing of supersaturated solutions of57Co in silicon
1983
·
W. Bergholz
, S. Damgaard
, et al.
·
physica status solidi (a)
·
10
A Model of Graph Coloring Dynamics With Attention Waves and Strategic Waiting
2009
·
BORISLAV HADZHIEV
, KATJA WINDT
, et al.
·
Advances in Complex Systems
·
9
Detection of Fast Diffusing Metal Impurities in Silicon by Haze Test and by Modulated Optical Reflectance: A Comparison
1989
·
P. Alpern
, W. Bergholz
, et al.
·
Journal of The Electrochemical Society
·
9
Comparison of Mössbauer spectra of57Co in silicon for high-temperature ion-implanted and for diffused samples
1979
·
G. Weyer
, A. Kettschau
, et al.
·
physica status solidi (a)
·
9
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Works count:
62
Citation count:
1,206
H-index:
15
I10-index:
22
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