Author

Takuya Yara

Observed name: T. Yara

Institutions: Sekisui Chemical (Japan), Nagoya University

Observed institutions: Sekisui Chemical (Japan), Nagoya University, The University of Osaka

OpenAlex ID: A5037084591

Roles of oxidizing species in a nonequilibrium atmospheric-pressure pulsed remote O2/N2 plasma glass cleaning process

2008 · Masahiro Iwasaki, Yuto Matsudaira, et al. · Journal of Applied Physics · 44

Low Temperature Fabrication of Diamond Films with Nanocrystal Seeding

1995 · Takuya Yara, Hiroshi Makita, et al. · Japanese Journal of Applied Physics · 32

Fabrication of Diamond Films at Low Pressure and Low-Temperature by Magneto-Active Microwave Plasma Chemical Vapor Deposition

1994 · Takuya Yara, Motokazu Yuasa, et al. · Japanese Journal of Applied Physics · 19

Hydrophobic treatment of organics against glass employing nonequilibrium atmospheric pressure pulsed plasmas with a mixture of CF4 and N2 gases

2011 · Hirotoshi Inui, Keigo Takeda, et al. · Journal of Applied Physics · 16

Effect of Low Level O2 Addition to N2 on Surface Cleaning by Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma

2007 · Masahiro Iwasaki, Keigo Takeda, et al. · Japanese Journal of Applied Physics · 15

Fabrication of diamond films by a magneto-active plasma CVD using alcohol-hydrogen system

1992 · Takuya Yara, Motokazu Yuasa, et al. · Applied Surface Science · 10

Low temperature growth of polycrystalline Si on polyethylene terephthalate (PET) films using pulsed-plasma CVD under near atmospheric pressure

2007 · M. Matsumoto, Y. Inayoshi, et al. · Thin Solid Films · 9

Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

2006 · Mitsutaka Matsumoto, Maki Suemitsu, et al. · ECS Transactions · 4

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

2008 · M. Matsumoto, Y. Inayoshi, et al. · Applied Surface Science · 3

Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors

2009 · Taiki Sato, Akira Ueno, et al. · Japanese Journal of Applied Physics · 1

Irradiation-damages in atmospheric plasma used in a resist ashing process for thin film transistors (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

2009 · Taiki Sato, Akira UENO, et al. · Japanese Journal of Applied Physics

Measurement of Ground State Oxygen Radical [O($^{3}$P)] in Surface Cleaning Process Employing Nonequilibrium Atmospheric-Pressure Pulsed Remote Plasma

2007 · Masahiro Iwasaki, Keigo Takeda, et al. · Bulletin of the American Physical Society

Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure

2006 · Mitsutaka matsumoto, Maki Suemitsu, et al. · ECS Meeting Abstracts

Initial features of diamond growth on silicon

1994 · H. Yagyu, N. Eimori, et al. · Elsevier eBooks

Y-Ba-Cu-O系高温超伝導体の電気的特性の格子定数および成形圧依存性

1989 · 実渡久地, 晃比嘉, et al. · Institutional Repositories DataBase (IRDB)

Works count: 15

Citation count: 153

H-index: 7

I10-index: 6