Get started
Author

F. Pio

Observed names: F Pio, Federico Pio
OpenAlex ID: A5037131907
Influence of nitrogen profile on electrical characteristics of furnace- or rapid thermally nitrided silicon dioxide films
1996 · D. Bouvet, P. A. Clivaz, et al. · Journal of Applied Physics · 69
Luminescence of fused silica: Observation of the O2− emission band
1987 · M. Guzzi, M. Martini, et al. · Physical review. B, Condensed matter · 45
Instrinsic and Impurity‐Related Point Defects in Amorphous Silica. A Spectroscopic Study
1990 · F. Pio, M. Guzzi, et al. · physica status solidi (b) · 41
On the charge build-up mechanisms in gate dielectrics
1994 · C. Papadas, G. Ghibaudo, et al. · Solid-State Electronics · 39
Neutron irradiation effects in amorphous SiO2: optical absorption and electron paramagnetic resonance
1993 · M Guzzi, M Martini, et al. · Journal of Physics Condensed Matter · 31
On the radiative recombination in ZnIn2S4
1985 · E. Grilli, M. Guzzi, et al. · physica status solidi (a) · 27
Accelerated current test for fast tunnel oxide evaluation (of EPROMs)
2002 · P. Cappelletti, P. Ghezzi, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 19
Modeling of the intrinsic retention characteristics of FLOTOX EEPROM cells under elevated temperature conditions
1995 · C. Papadas, G. Pananakakis, et al. · IEEE Transactions on Electron Devices · 17
Sheet resistance and layout effects in accelerated tests for dielectric reliability evaluation
1996 · F. Pio · Microelectronics Journal · 16
Series resistance effects in thin oxide capacitor evaluation
1992 · F. Pio, L. Ravazzi, et al. · IEEE Electron Device Letters · 14
Thermally stimulated luminescence above room temperature of amorphous SiO2
1990 · M. Guzzi, G. Lucchini, et al. · Solid State Communications · 13
Select transistor modulated cell array structure test application in EEPROM process reliability
2001 · Federico Pio, Enrico Gomiero · Solid-State Electronics · 11
Cell array structure test in EEPROM reliability assessment at an early process development stage
2000 · F Pio, E Gomiero · Microelectronics Reliability · 11
Select transistor modulated cell array structure test for EEPROM reliability
2002 · F. Pio, E. Gomiero · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 9
On the Charge Build-Up Mechanisms in Very Thin Insulator Layers
1994 · E. Vincent, C. Papadas, et al. · European Solid-State Device Research Conference · 9
Influence of series resistance in oxide parameter extraction from accelerated tests data
1993 · F. Pio, L. Ravazzi, et al. · Microelectronics Journal · 8
Influence of the cation mixing on the photoelectronic properties of the ZnxCd1−xIn2S4 (III) layered compounds
1984 · E. Grilli, M. Guzzi, et al. · Progress in Crystal Growth and Characterization · 8
Thin SiO2 films nitrided in N2O
1994 · N. Bellafiore, F. Pio, et al. · Microelectronics Journal · 7
Wafer level tunnel oxide reliability evaluation by means of the Exponentially Ramped Current Stress method
1993 · P. Cappelletti, P. Ghezzi, et al. · Microelectronics Reliability · 7
Thin oxide nitridation in N2O by RTP for non-volatile memories
1993 · N. Bellafiore, F. Pio, et al. · Microelectronics Journal · 7
Double-Poly EEPROM Cell for High Density Memories using Positive and Negative Voltage Programming
1996 · F. Pio, P. Paruzzi, et al. · European Solid-State Device Research Conference · 4
Impact of reactive ion etching using O/sub 2/+CHF/sub 3/ plasma on the endurance performance of FLOTOX EEPROM cells
1993 · C. Papadas, G. Ghibaudo, et al. · IEEE Transactions on Electron Devices · 4
A study of the oxide grown on WSi2
1991 · P Ghezzi, F Pio, et al. · Semiconductor Science and Technology · 4
PDF
Passivation scheme impact on retention reliability of non volatile memory cells
2002 · R. Bottini, A. Cascella, et al. · IEEE International Integrated Reliability Workshop final report · 3
Impact of furnace nitridation time in N2O ambient on the quality of the Si/SiO2 system
1994 · R. Le Bihan, E. André-Benoit, et al. · Microelectronics Journal · 3
Works count: 38
Citation count: 443
H-index: 11
I10-index: 13
Year
Topic
Type