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Wei Sun

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
2017 · Syed Ahmed Al Muyeed, Wei Sun, et al. · AIP Advances · 41
AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics
2017 · Wei Sun, Chee-Keong Tan, et al. · Scientific Reports · 40
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III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures
2017 · Wei Sun, Chee-Keong Tan, et al. · Scientific Reports · 36
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InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
2016 · Chee-Keong Tan, Damir Borovac, et al. · Scientific Reports · 36
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Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes
2016 · Peifen Zhu, Hongyang Zhu, et al. · Journal of Applied Physics · 34
Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
2018 · Wei Sun, Syed Ahmed Al Muyeed, et al. · Applied Physics Letters · 31
Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters
2016 · Chee-Keong Tan, Wei Sun, et al. · Scientific Reports · 28
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Screening dynamics of intrinsic electric field in AlGaN quantum wells
2008 · A. Pinos, S. Marcinkevičius, et al. · Applied Physics Letters · 28
First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters
2016 · Chee-Keong Tan, Damir Borovac, et al. · Scientific Reports · 22
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Strained-layer quantum well materials grown by MOCVD for diode laser application
2020 · Luke J. Mawst, Honghyuk Kim, et al. · Progress in Quantum Electronics · 20
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Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices
2019 · Matthew R. Peart, Xiongliang Wei, et al. · ACS Applied Electronic Materials · 20
Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy
2020 · Che-yu Liu, Hsien-chih Huang, et al. · ACS Applied Electronic Materials · 18
Effect of interface roughness on Auger recombination in semiconductor quantum wells
2017 · Chee-Keong Tan, Wei Sun, et al. · AIP Advances · 18
On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE
2019 · Damir Borovac, Wei Sun, et al. · Journal of Crystal Growth · 16
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Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
2019 · Syed Ahmed Al Muyeed, Wei Sun, et al. · Journal of Applied Physics · 16
Growth of AlN single crystals on 6H‐SiC (0001) substrates with AlN MOCVD buffer layer
2012 · Sibin Zuo, Jun Wang, et al. · Crystal Research and Technology · 16
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Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness
2019 · Wei Sun, Honghyuk Kim, et al. · Journal of Crystal Growth · 15
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Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes
2015 · Peifen Zhu, Chee-Keong Tan, et al. · Applied Optics · 14
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching
2018 · Xiongliang Wei, Syed Ahmed Al Muyeed, et al. · Applied Physics Letters · 10
Ultra-Broadband Optical Gain in III-Nitride Digital Alloys
2018 · Wei Sun, Chee-Keong Tan, et al. · Scientific Reports · 10
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Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy
2020 · Damir Borovac, Wei Sun, et al. · Journal of Crystal Growth · 9
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Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter
2016 · Chee-Keong Tan, Damir Borovac, et al. · Scientific Reports · 9
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AlInN/GaN diodes for power electronic devices
2020 · Matthew R. Peart, Damir Borovac, et al. · Applied Physics Express · 8
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Gain characteristics of InGaN quantum wells with AlGaInN barriers
2019 · Hanlin Fu, Wei Sun, et al. · AIP Advances · 6
Performance and Applications of Deep Uv Led
2013 · M. SHATALOV, A. LUNEV, et al. · Selected topics in electornics and systems · 4
Works count: 46
Citation count: 521
H-index: 16
I10-index: 20
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