Author

Alexander Toifl

Observed names: A Toifl, A. Toifl, Toifl, Alexander

Institution: Silvaco (United Kingdom)

Observed institutions: TU Wien, Silvaco (United Kingdom)

ORCID: 0000-0001-5054-4477

Observed ORCID: 0000-0001-5054-4477

OpenAlex ID: A5043817072

The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy

2020 · Alexander Toifl, Michael Quell, et al. · IEEE Access · 26

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Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide

2018 · V. Šimonka, A. Toifl, et al. · Journal of Applied Physics · 20

Continuum level-set model for anisotropic wet etching of patterned sapphire substrates

2021 · A Toifl, F Rodrigues, et al. · Semiconductor Science and Technology · 11

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Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications

2019 · Michael Quell, Alexander Toifl, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 7

Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics

2019 · Alexander Toifl, Vito Simonka, et al. · IEEE Transactions on Electron Devices · 7

Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching

2021 · Frâncio Rodrigues, Luiz Felipe Aguinsky, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6

Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations

2019 · Alexander Toifl, Michael Quell, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 5

Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations

2022 · Christoph Lenz, Alexander Toifl, et al. · Solid-State Electronics · 3

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Impact of Ion Energy and Yield in Oblique Ion Beam Etching Process for Blazed Gratings

2024 · T. Reiter, A. Toifl, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 2

Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride

2018 · Alexander Toifl, Vito Simonka, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 2

Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures

2023 · T. Reiter, A. Toifl, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 1

Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si

2021 · Luiz Felipe Aguinsky, Georg Wachter, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 1

Numerical Methods for Three-Dimensional Selective Epitaxy and Anisotropic Wet Etching Simulations

2021 · Toifl, Alexander · reposiTUm (TU Wien) · 1

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Simulation of a Polymer-Free Drie Process Using $\text{SF}_{6} / \mathrm{O}_{2}$ Plasma Etching

2025 · Tobias Reiter, Alexander Toifl, et al. · International Conference on Simulation of Semiconductor Processes and Devices

A Modern Formulation of Knudsen Diffusion with Applications to Nanofabrication

2023 · Luiz Felipe Aguinsky, Alexander Toifl, et al. · IEEE International Conference on Nanotechnology (IEEE-NANO)

Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations

2021 · Christoph Lenz, Alexander Toifl, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Works count: 16

Citation count: 92

H-index: 6

I10-index: 3