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Ryota Wada

Observed name: R. Wada
ORCID: 0000-0003-1879-2619
Observed ORCID: 0000-0003-1879-2619
OpenAlex ID: A5045273404
Characteristics of MoO3 films grown by molecular beam epitaxy
2014 · Kazuto Koike, Ryota Wada, et al. · Japanese Journal of Applied Physics · 54
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The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles
2021 · Ryota Wada, Tsutomu Nagayama, et al. · Japanese Journal of Applied Physics · 26
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(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication
2020 · Hrishikesh Das, Swapna Sunkari, et al. · ECS Transactions · 13
SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth
2022 · Roman Maloušek, Jan Chochol, et al. · Materials science forum · 7
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Development of ultra-high-current implanter for material modification process in next era devices
2023 · Hiroaki Kai, Yuya Uchida, et al. · MRS Advances · 6
IMPHEAT-II:In situ XRD system, enhancement of implantation angle accuracy through per-wafer measurement of off-axis angle for channeling implantation
2025 · Y. Hirai, H. Ide, et al. · MRS Advances · 5
IR-LAS Measurements of a Pulsed Xenon Discharge Plasma
2005 · Masafumi Jinno, Ryota Wada, et al. · IEEJ Transactions on Fundamentals and Materials · 3
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High-current metal ion source for material modification in the semiconductor manufacturing processes
2025 · T. Matsumoto, S. Hahto, et al. · MRS Advances · 2
Exploring the Impact of Implant Temperature and a Novel Aluminum Ion Source on the Electrical Performance of 4H-SiC PiN Diodes
2023 · Justin Lynch, Ryota Wada, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 2
The diffusion analysis of implanted heavy metals in 4H-SiC
2022 · Ryota Wada, Nariaki Hamamoto, et al. · MRS Advances · 2
Low Specific Contact Resistivity Measurements using a New Test Structure and its Reduction to 10−9 ohm-cm2 in p-type SiGe/Metal Contacts using Flash Lamp Annealing
2019 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · International Workshop on Junction Technology · 2
Precise Diffusion Control in the Nanometer Range in n+/p and p+/n Ge Using Ion Implantation and Flash Lamp Annealing
2018 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · International Conference on Ion Implantation Technology · 2
8 MeV Proton Irradiation Damage and Its Recovery by Annealing on Single-Crystalline Zinc Oxide Crystals
2012 · Kazuto Koike, Ryugo Fujimoto, et al. · MRS Proceedings · 2
Estimation of threshold hole density in single Shockley stacking fault expansion and its suppression through proton implantation in 4H-SiC PiN Diodes
2025 · Atsushi Shimbori, Ryota Wada, et al. · Conference digest · 1
The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles
2021 · Ryota Wada, Tsutomu Nagayama, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
The Investigation of Material Modification for SiO2, Si3N4 Film and Photo-resist using High-Dose Ion Implantation Technique
2020 · R. Wada, H. Kai, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 1
Surface modification of SiO 2 thin film using high-dose ion implantation technique as a suitable manufacturing process
2019 · Ryota Wada, Hiroaki Kai, et al. · Japanese Journal of Applied Physics · 1
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Depth-Dependent Suppression of Bipolar Degradation in 4H-SiC Diodes via Proton Implantation and Evaluation of Safe Operating Current Density Range
2026 · Atsushi Shimbori, Ryota Wada, et al. · Materials science forum
An advantage of the use of XRD apparatus embedded in IMPHEAT-II for SiC device fabrication using channeling implants
2025 · Shinkichi Hamada, Yuya Hirai, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications
Material Modification by High-Dose Ion Implantation Using Ultra High-Current Implanter
2025 · Ryota Wada, Yuya Uchida, et al. · IEEE International Conference on Device Technologies for Diversified Applications (DTDA)
Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation
2025 · Atsushi Shimbori, Ryota Wada, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
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The Detailed Analysis of Diffusion Behavior of implanted ions in 4H-SiC
2023 · Ryota Wada, Tsutomu Nagayama, et al. · International Workshop on Junction Technology
Formation of germanide using flash lamp annealing (FLA) and influence of annealing on active impurities
2021 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · The Japan Society of Applied Physics
Surface Modification of SiO2 Thin Film using High-Dose Ion Implantation Technique as a Manufacturing Worthy Process
2019 · R. Wada, H. Kai, et al. · International Conference on Solid State Devices and Materials (SSDM)
Diffusion control of n-type dopants in Ge with high activation using co-implantation and flash lamp annealing
2019 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · The Japan Society of Applied Physics
Works count: 30
Citation count: 130
H-index: 5
I10-index: 3
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