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Jean Lorenzzi

Observed names: Da Conceicao Lorenzzi, Jean Carlos, J. C. Lorenzzi, J. Lorenzzi, Jean Carlos Da Conceicao Lorenzzi, Jean Lorenzzi D, Lorenzzi, J., Lorenzzi, Jean
Observed institutions: Lyon 1 Université, Centre National de la Recherche Scientifique, Université de Lyon, Aristotle University of Thessaloniki, University of Catania, Laboratoire des Multimatériaux et Interfaces, Institute for Microelectronics and Microsystems, Université Montpellier 2, KTH Royal Institute of Technology
OpenAlex ID: A5045485547
Effect of initial substrate conditions on growth of cubic silicon carbide
2011 · R. Vasiliauskas, M. Marinova, et al. · Journal of Crystal Growth · 28
Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate
2009 · Olivier Kim-Hak, Gabriel Ferro, et al. · Journal of Crystal Growth · 22
Improved Ni/3C-SiC contacts by effective contact area and conductivity increases at the nanoscale
2009 · Jens Eriksson, Fabrizio Roccaforte, et al. · Applied Physics Letters · 21
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
2010 · Remigijus Vasiliauskas, Maya Marinova, et al. · Materials science forum · 16
3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt
2011 · J. Lorenzzi, M. Lazar, et al. · Crystal Growth & Design · 14
Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces
2011 · Jens Eriksson, Fabrizio Roccaforte, et al. · Journal of Applied Physics · 13
Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC
2010 · J. W. Sun, G. Zoulis, et al. · Journal of Applied Physics · 13
Incorporation of group III, IV and V elements in 3C–SiC(111) layers grown by the vapour–liquid–solid mechanism
2010 · J. Lorenzzi, G. Zoulis, et al. · Journal of Crystal Growth · 12
Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
2010 · Jean Lorenzzi, Georgios Zoulis, et al. · Materials science forum · 10
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
2009 · Maya Marinova, Ioannis Tsiaousis, et al. · Materials science forum · 10
Growth of silicon oxide nanowires at low temperature using tin hydroxide catalyst
2011 · Davy Carole, Arnaud Brioude, et al. · Journal of Crystal Growth · 9
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
2010 · Nikoletta Jegenyes, Jean Lorenzzi, et al. · Materials science forum · 9
Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates
2011 · Jean Lorenzzi, Veronique Souliere, et al. · Diamond and Related Materials · 8
On the Mechanism of Twin Boundary Elimination in 3C-SiC(111) Heteroepitaxial Layers on α-SiC Substrates
2011 · Gabriel Ferro, Olivier Kim-Hak, et al. · Materials science forum · 7
Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates
2010 · Olivier Kim-Hak, Gabriel Ferro, et al. · Thin Solid Films · 7
MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)
2011 · Jean Lorenzzi, Romain Esteve, et al. · Journal of The Electrochemical Society · 6
Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary system
2010 · Jean Lorenzzi, Gabriel Ferro, et al. · Journal of Crystal Growth · 6
Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
2010 · Georgios Manolis, Georgios Zoulis, et al. · Materials science forum · 6
Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
2010 · Frédéric Mercier, Olivier Kim-Hak, et al. · Materials science forum · 6
3C-SiC MOS Based Devices: From Material Growth to Device Characterization
2011 · Jean Lorenzzi, Romain Esteve, et al. · Materials science forum · 5
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
2010 · Olivier Kim-Hak, Jean Lorenzzi, et al. · Materials science forum · 5
Defects in (111) 3C-SiC layers grown at different temperatures by VLS and CVD on 6H-SiC substrates
2010 · Maya Marinova, Nikoletta Jegenyés, et al. · AIP conference proceedings · 5
LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
2010 · Jian Wu Sun, Georgios Zoulis, et al. · Materials science forum · 4
Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial Layers
2010 · N. Jegenyes, M. Marinova, et al. · AIP conference proceedings · 4
Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC
2009 · Maya Marinova, Georgios Zoulis, et al. · Physica B Condensed Matter · 4
Works count: 54
Citation count: 275
H-index: 10
I10-index: 10
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