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Koji Okuno

Observed names: K. Okuno, Kenji Okuno, 奥野, 浩司
ORCID: 0000-0002-7811-5065
Observed ORCID: 0000-0002-7811-5065
OpenAlex ID: A5047177975
m -Plane GaInN Light Emitting Diodes Grown on Patterned a -Plane Sapphire Substrates
2009 · Yoshiki Saito, Koji Okuno, et al. · Applied Physics Express · 30
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m-Plane GaN Films Grown on Patterneda-Plane Sapphire Substrates with 3-inch Diameter
2009 · Koji Okuno, Yoshiki Saito, et al. · Applied Physics Express · 26
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Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate
2023 · S. F. Chichibu, K. Nagata, et al. · Applied Physics Letters · 22
InGaN monolithic full-color light-emitting diode developed by selective removal of active layers in a single p–n junction
2023 · Koichi Goshonoo, Koji Okuno, et al. · Applied Physics Express · 15
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Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires
2021 · Weifang Lu, Nanami Nakayama, et al. · ACS Applied Materials & Interfaces · 12
Emission characteristics of GaInN/GaN multiple quantum shell nanowire‐based LEDs with different p ‐GaN growth conditions
2021 · Sae Katsuro, Weifang Lu, et al. · Nanophotonics · 12
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Demonstration of InGaN full-color monolithic micro-LED display using stacking and selective removal of the light-emitting layer
2025 · Koichi Goshonoo, Koji Okuno, et al. · Applied Physics Express · 11
Room temperature pulsed operation of nitride nanowire-based multi-quantum shell laser diodes by MOVPE
2021 · Koji Okuno, Koichi Mizutani, et al. · Applied Physics Express · 9
Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction
2021 · Yoshiya Miyamoto, Weifang Lu, et al. · ACS Applied Materials & Interfaces · 8
Structural evolution of AlN buffer and crystal quality of GaN films on a‐ and c‐sapphire grown by metalorganic vapor phase epitaxy
2012 · Koji Okuno, Takahide Oshio, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
Enhancing the optical properties of organic fluorine compound-encapsulated AlGaN-based ultraviolet light-emitting diodes with Ni/Au reflective electrodes
2024 · Koji Okuno, Rie Iwatsuki, et al. · Japanese Journal of Applied Physics · 5
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Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire
2021 · Naoki Sone, Daiki Jinno, et al. · Japanese Journal of Applied Physics · 4
Enhancement of light output power on GaN‐based light‐emitting diodes using two‐direction stripe‐patterned sapphire substrate
2014 · Koji Okuno, Takahide Oshio, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Growth Mode and Threading Dislocation Behavior of GaN Films Grown on Patterned Sapphire Substrate with Radial Stripe Pattern
2013 · Koji Okuno, Takahide Oshio, et al. · Japanese Journal of Applied Physics · 4
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Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes
2025 · Yoshiki Saito, Atsushi Miyazaki, et al. · Applied Physics Express · 3
Growth of non‐polar a ‐plane III‐nitride thin films on Si(100) using non‐polar plane buffer layer
2003 · J.‐H. Song, Y.‐Z. Yoo, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3
InGaN-based blue, green monolithic micro-LED display with n-type interlayer
2024 · Koji Okuno, Koichi Goshonoo, et al. · Japanese Journal of Applied Physics · 2
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Emission Mechanism of Light‐Emitting Diode Structures with Red, Green, and Blue Active Layers Separated by Si‐Doped Interlayers
2023 · Koji Okuno, Koichi Goshonoo, et al. · physica status solidi (a) · 2
Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions
2022 · Koji Okuno, Koichi Mizutani, et al. · physica status solidi (b) · 2
MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells
2021 · Koji Okuno, Koichi Mizutani, et al. · Journal of Crystal Growth · 2
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Influence of silane flow rate on the structural and optical properties of GaN nanowires with multiple-quantum-shells
2021 · Naoki Sone, Weifang Lu, et al. · Journal of Crystal Growth · 2
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Device fabrication for multiple quantum shell nanowires based laser diodes
2021 · Renji Okuda, Weifang Lu, et al. · Gallium Nitride Materials and Devices · 2
Laser lift-off of ultraviolet-C light-emitting-diode epitaxial layers with an AlGaN nucleation layer grown on a sapphire substrate
2025 · Koji Okuno, Sena Miura, et al. · Japanese Journal of Applied Physics · 1
Hole Generation in Polarization‐Doped AlxGa1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al0.35Ga0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode
2024 · Hayata Takahata, Tomoaki Kachi, et al. · physica status solidi (a) · 1
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Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes
2024 · Tomoaki Kachi, Hayata Takahata, et al. · physica status solidi (b) · 1
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Works count: 40
Citation count: 189
H-index: 8
I10-index: 7
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