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Abdelmadjid Benabdelmoumene

Observed names: A. Benabdelmoumene, Abdelmadjid Benabdelmoumen, Benabdelmoumene Abdelmadjid
ORCID: 0000-0003-4879-6274
Observed ORCID: 0000-0003-4879-6274
OpenAlex ID: A5047214860
Recovery investigation of NBTI-induced traps in n-MOSFET devices
2020 · Boualem Djezzar, Abdelmadjid Benabdelmoumene, et al. · Microelectronics Reliability · 24
A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor
2013 · Boualem Djezzar, Hakim Tahi, et al. · Solid-State Electronics · 23
A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues
2012 · Hakim Tahi, Boualem Djezzar, et al. · Microelectronics Reliability · 18
Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique
2014 · Hakim Tahi, Boualem Djezzar, et al. · Microelectronics Reliability · 16
Sizing of the CMOS 6T‐SRAM cell for NBTI ageing mitigation
2020 · Amel Chenouf, Boualem Djezzar, et al. · IET Circuits Devices & Systems · 14
Analysis of NBTI Degradation in nMOS-Capacitors and nMOSFETs
2018 · Abdelmadjid Benabdelmoumene, Boualem Djezzar, et al. · IEEE Transactions on Device and Materials Reliability · 14
On the turn-around phenomenon in n-MOS transistors under NBTI conditions
2016 · A. Benabdelmoumene, B. Djezzar, et al. · Solid-State Electronics · 14
On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
2015 · Boualem Djezzar, Hakim Tahi, et al. · Solid-State Electronics · 14
Does NBTI effect in MOS transistors depend on channel length?
2014 · Abdelmadjid Benabdelmoumene, Boualem Djezzar, et al. · 14
A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors
2012 · Boualem Djezzar, Hakim Tahi, et al. · Japanese Journal of Applied Physics · 10
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Geometric Component in Constant-Amplitude Charge-Pumping Characteristics of LOCOS- and LDD-MOSFET Devices
2010 · Hakim Tahi, Boualem Djezzar, et al. · IEEE Transactions on Device and Materials Reliability · 9
NBTI Fast Electrical Characterization in pMOSFET Devices
2021 · DhiaElhak MESSAOUD, Boualem Djezzar, et al. · Algerian Journal of Signals and Systems · 4
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Fast Ids – Vgs Technique Implementation for NBTI Characterization
2020 · Messaoud Dhia Elhak, Zitouni Abdelkader, et al. · 4
Two-point capacitance-voltage (TPCV) concept: A new method for NBTI characterization
2012 · Abdelmadjid Benabdelmoumene, Boualem Djezzar, et al. · IEEE International Integrated Reliability Workshop final report · 4
Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique
2023 · Abdelmadjid Benabdelmoumene, Boualem Djezzar, et al. · Russian Microelectronics · 3
Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
2023 · DhiaElhak Messaoud, Boualem Djezzar, et al. · IEEE Transactions on Device and Materials Reliability · 3
On the Circuit-Level Reliability Degradation Due to AC NBTI Stress
2016 · Amel Chenouf, Boualem Djezzar, et al. · IEEE Transactions on Device and Materials Reliability · 3
Charge Pumping, Geometric Component, and Degradation Parameter Extraction in MOSFET Devices
2015 · Hakim Tahi, Cherifa Tahanout, et al. · IEEE Transactions on Device and Materials Reliability · 3
Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors
2013 · Abdelmadjid Benabdelmoumene, Boualem Djezzar, et al. · 3
An accurate extraction methodology for NBTI induced degradation using charge pumping based methods
2012 · Hakim Tahi, Boualem Djezzar, et al. · 3
Oxide trap annealing by H2 cracking at E' center under NBTI stress
2012 · Cherifa Tahanout, Becharia Nadji, et al. · 3
A new eye on NBTI-induced traps up to device lifetime using on the fly oxide trap method
2012 · Boualem Djezzar, Hakim Tahi, et al. · 3
On the fly oxide trap (otfot) concept: A new method for bias temperature instability characterization
2012 · B. Djezzar, H. Tahi, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3
Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species
2014 · Mohamed Boubaaya, Hakim Tahi, et al. · International Design and Test Workshop (IDT) · 2
On the permanent components of negative bias temperature instability
2013 · Boualem Djezzar, Hakim Tahi, et al. · 2
Works count: 29
Citation count: 218
H-index: 10
I10-index: 10
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