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L. Görgens

Observed names: L Görgens, L. Goergens, L. Gorgens, Lutz Gorgens, Lutz Görgens, Lutz Görgens Lutz Görgens
OpenAlex ID: A5048461356
Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
1999 · Michael K. Kelly Michael K. Kelly, Robert P. Vaudo Robert P. Vaudo, et al. · Japanese Journal of Applied Physics · 319
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Hydrogen response mechanism of Pt–GaN Schottky diodes
2002 · J. Schalwig, G. Müller, et al. · Applied Physics Letters · 202
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications
2003 · M. Eickhoff, J. Schalwig, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 134
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Structural and optical properties of Si-doped GaN
2000 · A. Cremades, L. Görgens, et al. · Physical review. B, Condensed matter · 88
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Characterization of InGaN thin films using high-resolution x-ray diffraction
2000 · L. Görgens, O. Ambacher, et al. · Applied Physics Letters · 61
Doping and its efficiency in a−SiOx:H
2004 · Andreas Janotta, Rainer Janssen, et al. · Physical Review B · 56
Growth and characterization of GaN:Mn epitaxial films
2003 · T. Graf, M. Gjukic, et al. · Journal of Applied Physics · 35
Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy
1999 · N. Wieser, O. Ambacher, et al. · Applied Physics Letters · 32
High resolution elastic recoil detection
2004 · G. Dollinger, A. Bergmaier, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 31
Diffusion in diamond-like carbon
2003 · H. Kröger, C. Ronning, et al. · Diamond and Related Materials · 26
High-resolution elastic recoil detection utilizing Bayesian probability theory
2001 · P. Neumaier, G. Dollinger, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 21
Characterization of ultra thin oxynitrides: A general approach
2000 · B. Brijs, J. Deleu, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 21
Transverse cooling and heating in ion channeling
2003 · F. Grüner, W. Assmann, et al. · Physical review. B, Condensed matter · 17
Epitaxial CaGe2 films on germanium
2000 · G. Vogg, M.S. Brandt, et al. · Journal of Crystal Growth · 16
Influence of strain and buffer layer type on In incorporation during GaInN MOVPE
1999 · F Scholz, J Off, et al. · Materials Science and Engineering B · 16
The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium
2000 · J Schulze, H Baumgärtner, et al. · Thin Solid Films · 11
Charge Transfer at the Mn Acceptor Level in GaN
2003 · T. Graf, M. Gjukic, et al. · Journal of Superconductivity · 10
Cooling and heating of channeled ions and corresponding charge state distributions
2003 · M. Schubert, F. Grüner, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8
Ion beam analysis of aluminium in thin layers
2002 · M.J.F. Healy, A.J. Pidduck, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Dependence of the doping efficiency on material composition in n-type a-SiO :H
2002 · A Janotta, R Janssen, et al. · Journal of Non-Crystalline Solids · 3
MOSFET Technology as a Key for High Power Density Converters
2006 · Lutz Gorgens, Ralf Siemieniec, et al. · International Power Electronics and Motion Control Conference (IPEMC) · 1
New opportunities in DC/DC conversion with recent developments MOSFET technologies
2005 · L. Gorgens, D. Ahlers, et al. · European Conference on Power Electronics and Applications · 1
Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration
2000 · A. P. Lima, C. R. Miskys, et al. · MRS Proceedings · 1
NewOpportunities inDC/DCConversion withRecent Developments of MOSFET Technologies
2005 · L. Görgens, Dirk Ahlers, et al.
Group III-nitride devices for field effect based gas detection
2004 · M. Eickhoff, J. Schalwig, et al. · International Conference on Semiconducting and Insulating Materials (SIMC)
Works count: 26
Citation count: 1,116
H-index: 15
I10-index: 17
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