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Dirk Wolansky

Observed names: D Wolansky, D. Wolanski, D. Wolansky, Dirk Wolanski, Wolansky, D., Wolansky, Dirk 1965-
ORCID: 0000-0002-4058-4886
Observed ORCID: 0000-0002-4058-4886
OpenAlex ID: A5048578439
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices
2011 · Christian Walczyk, Damian Walczyk, et al. · IEEE Transactions on Electron Devices · 251
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
2010 · B. Heinemann, R. Barth, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 180
SiGe HBT with fx/fmax of 505 GHz/720 GHz
2016 · B. Heinemann, H. Rucker, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 177
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
2010 · Holger Rucker, Bernd Heinemann, et al. · IEEE Journal of Solid-State Circuits · 156
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
2009 · Ch. Walczyk, Ch. Wenger, et al. · Journal of Applied Physics · 110
A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps
2009 · H. Rucker, B. Heinemann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 72
A CMOS-based sensor array for in-vitro neural tissue interfacing with 4225 recording sites and 1024 stimulation sites
2014 · Gabriel Bertotti, Dmytro Velychko, et al. · IEEE Biomedical Circuits and Systems Conference (BioCAS) · 67
Monolithic integrated SAW filter based on AlN for high-frequency applications
2013 · Udo Ch Kaletta, Paulo V Santos, et al. · Semiconductor Science and Technology · 50
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BEOL embedded RF-MEMS switch for mm-wave applications
2009 · M. Kaynak, K. E. Ehwald, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
A low-parasitic collector construction for high-speed SiGe:C HBTs
2005 · B. Heinemann, R. Barth, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration
2011 · Ch. Walczyk, Ch. Wenger, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 49
SiGe HBT module with 2.5 ps gate delay
2008 · A. Fox, B. Heinemann, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 46
Ultrathin TiN Membranes as a Technology Platform for CMOS‐Integrated MEMS and BioMEMS Devices
2011 · M. Birkholz, K.‐E. Ehwald, et al. · Advanced Functional Materials · 45
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Corrosion-resistant metal layers from a CMOS process for bioelectronic applications
2009 · M. Birkholz, K.-E. Ehwald, et al. · Surface and Coatings Technology · 45
A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module
2003 · D. Knoll, K.E. Ehwald, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Thermal oxidation of chemical vapour deposited tungsten layers on silicon substrates for embedded non-volatile memory application
2008 · Rakesh Sohal, Christian Walczyk, et al. · Thin Solid Films · 35
AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss
2015 · Udo Christian Kaletta, Christian Wipf, et al. · IEEE Transactions on Electron Devices · 34
BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique
2010 · M. Kaynak, M. Wietstruck, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
SiGe BiCMOS Technology with 3.0 ps Gate Delay
2007 · H. Rucker, O. Fursenko, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics
2010 · M. Lukosius, Ch. Walczyk, et al. · Thin Solid Films · 27
Resistive switching behavior in TiN/HfO2/Ti/TiN devices
2012 · D. Walczyk, T. Bertaud, et al. · International Semiconductor Conference Dresden-Grenoble (ISCDG) · 26
CMOS-compatible purely capacitive interfaces for high-density in-vivo recording from neural tissue
2015 · Sven Schroder, Claudia Cecchetto, et al. · IEEE Biomedical Circuits and Systems Conference (BioCAS) · 23
A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors
2004 · D. Knoll, B. Heinemann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 23
Sensing glucose concentrations at GHz frequencies with a fully embedded Biomicro-electromechanical system (BioMEMS)
2013 · M. Birkholz, K.-E. Ehwald, et al. · Journal of Applied Physics · 17
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Influence of N2/H2 plasma treatment on chemical vapor deposited TiN multilayer structures for advanced CMOS technologies
2003 · V. Melnik, D. Wolanski, et al. · Materials Science and Engineering B · 17
Works count: 84
Citation count: 1,886
H-index: 23
I10-index: 31
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