Work

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Year: 2009

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3139282

Authors: Ch. Walczyk, Ch. Wenger, R. Sohal, M. Lukosius, A. Fox, J. Dąbrowski, D. Wolansky, B. Tillack, H.-J. Müssig, T. Schroeder

Institutions: Leibniz Institute for High Performance Microelectronics, Technische Universität Berlin

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsche Forschungsgemeinschaft

OpenAlex ID: W2013684271

FWCI: 10.57

Cites: 41

Cited by: 110

Related to: 10