Author

J. Dąbrowski

Observed names: Dabrowski, J., Dabrowski, Jaroslaw, J Dabrowski, J Da̧browski, J Dąbrowski, J. Dabrowski, J. Da̧browski, J. Dąbrowski, Jarek Dabrowski, Jarek Dąbrowski, Jaroslaw Dabrowski, Jaroslaw Dąbrowski, Jarosław Dąbrowski

Institution: Leibniz Institute for High Performance Microelectronics

Observed institutions: Max Planck Society, Fritz Haber Institute of the Max Planck Society, Institute of Physics, Leibniz Institute for High Performance Microelectronics, Polish Academy of Sciences

ORCID: 0000-0003-0088-5390

Observed ORCID: 0000-0003-0088-5390

OpenAlex ID: A5081587399

Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2 ?

1988 · Jaroslaw Dabrowski, Matthias Scheffler · Physical Review Letters · 273

Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface

1992 · Jarosław Dąbrowski, Matthias Scheffler · Applied Surface Science · 252

Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment

1994 · J. Da̧browski, H. J. Müssig, et al. · Physical Review Letters · 193

Isolated arsenic-antisite defect in GaAs and the properties ofEL2

1989 · Jaroslaw Dabrowski, Matthias Scheffler · Physical review. B, Condensed matter · 181

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

2009 · Ch. Walczyk, Ch. Wenger, et al. · Journal of Applied Physics · 110

Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

2002 · A. Fissel, J. Da̧browski, et al. · Journal of Applied Physics · 105

Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors

1988 · Matthias Scheffler, Jaroslaw Dabrowski · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 103

Titanium-added praseodymium silicate high-k layers on Si(001)

2005 · T. Schroeder, G. Lupina, et al. · Applied Physics Letters · 79

Low-Dimensional and Nanostructured Materials and Devices

2015 · Hilmi Ünlü, Norman J. M. Horing, et al. · Nanoscience and technology · 72

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

2016 · M. Lukosius, J. Dabrowski, et al. · ACS Applied Materials & Interfaces · 68

Calculation of the surface stress anisotropy for the buckled Si(001)(1×2) andp(2×2) surfaces

1994 · J. Da̧browski, E. Pehlke, et al. · Physical review. B, Condensed matter · 51

First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

2004 · Ch. Wenger, J. Dąbrowski, et al. · Materials Science in Semiconductor Processing · 50

Pseudopotential study of PrO2 and HfO2 in fluorite phase

2001 · J. Da̧browski, V. Zavodinsky, et al. · Microelectronics Reliability · 50

On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

2011 · Ch. Walczyk, Ch. Wenger, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 49

Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers

2007 · G. Kissinger, J. Dabrowski, et al. · Journal of The Electrochemical Society · 49

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Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization

2006 · G. Lupina, T. Schroeder, et al. · Journal of Applied Physics · 45

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

2006 · T. Schroeder, P. Zaumseil, et al. · Journal of Applied Physics · 44

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

2008 · G. Lupina, G. Kozłowski, et al. · Applied Physics Letters · 43

Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si(111)

2005 · T. Schroeder, T.-L. Lee, et al. · Journal of Applied Physics · 42

Dielectric and structural properties of thin SrHfO3 layers on TiN