Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
Year: 2002
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1471943
Authors: A. Fissel, J. Da̧browski, H. J. Osten
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2054745396
