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H. J. Osten

Observed names: H J Osten, H Jörg Osten, H. J. OSTEN, H. Jorg Osten, H. Jorg. Osten, H. Jörg Osten, H.-J Osten, H.-J. Osten, H.-Jörg Osten, H.J Osten, H.J. Osten, H.Jörg Osten, H.‐J. OSTEN, Hans J. Osten
Observed institutions: Goethe University Frankfurt, Leibniz University Hannover, University of Illinois Chicago, University of Oxford, University of Southampton, Leibniz Institute for High Performance Microelectronics
OpenAlex ID: A5058800984
Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
1994 · H. J. Osten, E. Bugiel, et al. · Applied Physics Letters · 142
Strain-stabilized highly concentrated pseudomorphic Si1−x Cx layers in Si
1994 · H. Rücker, M. Methfessel, et al. · Physical Review Letters · 139
Suppressed diffusion of boron and carbon in carbon-rich silicon
1998 · H. Rücker, B. Heinemann, et al. · Applied Physics Letters · 135
Theoretical Aspects of Isotope Effects on Nuclear Shielding
1986 · Cynthia J. Jameson, H. Jörg Osten · Annual reports on NMR spectroscopy · 113
Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
2002 · A. Fissel, J. Da̧browski, et al. · Journal of Applied Physics · 105
Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001)
1996 · H. J. Osten, Myeongcheol Kim, et al. · Journal of Applied Physics · 95
Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions
2002 · H. J. Osten, J. P. Liu, et al. · Applied Physics Letters · 94
Growth and properties of strained Si1-x-yGexCylayers
1995 · S C Jain, H J Osten, et al. · Semiconductor Science and Technology · 90
Surfactant-controlled solid phase epitaxy of germanium on silicon
1992 · H. J. Osten, J. Klatt, et al. · Physical Review Letters · 87
Phonons as a probe of short-range order in Si1−x Cx alloys
1996 · H. Rücker, M. Methfessel, et al. · Physical review. B, Condensed matter · 70
Observation of the formation of a carbon-rich surface layer in silicon
1995 · H. J. Osten, M. Methfessel, et al. · Physical review. B, Condensed matter · 61
Investigation of the high temperature behavior of strained Si1−yCy /Si heterostructures
1995 · G. G. Fischer, P. Zaumseil, et al. · Journal of Applied Physics · 60
Substitutional carbon incorporation in epitaxial Si1−yCy alloys on Si(001) grown by molecular beam epitaxy
1999 · H. J. Osten, J. Griesche, et al. · Applied Physics Letters · 59
Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te
1993 · H. J. Osten, J. Klatt, et al. · Journal of Applied Physics · 58
Charge transport in strained Si1−yCy and Si1−x−yGexCy alloys on Si(001)
1997 · H. J. Osten, P. Gaworzewski · Journal of Applied Physics · 55
Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)
1998 · H. Jörg Osten · Journal of Applied Physics · 54
Isotope effects on spin-spin coupling
1986 · Cynthia J. Jameson, H. Jorg. Osten · Journal of the American Chemical Society · 54
Band offset predictions for strained group IV alloys: Si1-x-yGexCyon Si(001) and Si1-xGexon Si1-zGez(001)
2000 · Sylvie Galdin, Philippe Dollfus, et al. · Semiconductor Science and Technology · 53
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High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide
2002 · H.J. Osten, J.P. Liu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 51
In situ monitoring of strain relaxation during antimony-mediated growth of Ge and Ge1−y Cy layers on Si(001) using reflection high energy electron diffraction
1994 · H. J. Osten, J. Klatt · Applied Physics Letters · 49
Raman investigations of elastic strain relief in Si1−xGex layers on patterned silicon substrate
1993 · B. Dietrich, E. Bugiel, et al. · Journal of Applied Physics · 49
The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100)
1992 · H. J. Osten, G. Lippert, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 49
Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification
2003 · H. Rucker, B. Heinemann, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48
The additivity of NMR isotope shifts
1984 · Cynthia J. Jameson, H.-Jörg Osten · The Journal of Chemical Physics · 48
Strain relaxation in tensile-strained layers on Si(001)
1996 · H J Osten, D Endisch, et al. · Semiconductor Science and Technology · 47
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Works count: 147
Citation count: 3,451
H-index: 37
I10-index: 82
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