Work

Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si(111)

Year: 2005

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1883304

Authors: T. Schroeder, T.-L. Lee, L. Libralesso, I. Joumard, J. Zegenhagen, P. Zaumseil, C. Wenger, G. Lupina, G. Lippert, J. Dabrowski, H.-J. Müssig

Institution: Leibniz Institute for High Performance Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W49822679

FWCI: 4.611

Cites: 44

Cited by: 42

Related to: 10