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H.‐J. Müssig

Observed names: H-J Müssig, H. - J. Mussig, H. J. Müssig, H.-J Müssig, H.-J. Mussig, H.-J. Müssig, H.-J. Müssig, H.J Müssig, H.J. Mussig, H.J. Müssig
OpenAlex ID: A5110140175
Atomic Structure of Clean Si(113) Surfaces: Theory and Experiment
1994 · J. Da̧browski, H. J. Müssig, et al. · Physical Review Letters · 193
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
2009 · Ch. Walczyk, Ch. Wenger, et al. · Journal of Applied Physics · 110
Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions
2002 · H. J. Osten, J. P. Liu, et al. · Applied Physics Letters · 94
Titanium-added praseodymium silicate high-k layers on Si(001)
2005 · T. Schroeder, G. Lupina, et al. · Applied Physics Letters · 79
Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors
2008 · Ch. Wenger, G. Lupina, et al. · Journal of Applied Physics · 57
Mechanism of dopant segregation to SiO2/Si(001) interfaces
2002 · J. Dabrowski, H.-J. Müssig, et al. · Physical review. B, Condensed matter · 56
First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics
2004 · Ch. Wenger, J. Dąbrowski, et al. · Materials Science in Semiconductor Processing · 50
Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization
2006 · G. Lupina, T. Schroeder, et al. · Journal of Applied Physics · 45
On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)
2006 · T. Schroeder, P. Zaumseil, et al. · Journal of Applied Physics · 44
Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications
2008 · G. Lupina, G. Kozłowski, et al. · Applied Physics Letters · 43
Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si(111)
2005 · T. Schroeder, T.-L. Lee, et al. · Journal of Applied Physics · 42
Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study
2009 · A. Giussani, P. Rodenbach, et al. · Journal of Applied Physics · 41
Dielectric and structural properties of thin SrHfO3 layers on TiN
2008 · G. Lupina, G. Kozłowski, et al. · Applied Physics Letters · 40
Growth of crystalline praseodymium oxide on silicon
2002 · H.J Osten, J.P Liu, et al. · Journal of Crystal Growth · 40
Initial stages of praseodymium oxide film formation on Si()
2002 · H.-J. Müssig, J. Da̧browski, et al. · Surface Science · 38
Epitaxial growth of praseodymium oxide on silicon
2001 · H.J Osten, J.P Liu, et al. · Materials Science and Engineering B · 38
The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors
2009 · Ch. Wenger, M. Lukosius, et al. · Thin Solid Films · 36
The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems
2008 · A. Giussani, O. Seifarth, et al. · Journal of Applied Physics · 35
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Silicate layer formation at Pr2O3∕Si(001) interfaces
2004 · D. Schmeißer, H.-J. Müssig, et al. · Applied Physics Letters · 35
Influence of the electrode material on HfO2 metal-insulator-metal capacitors
2009 · Ch. Wenger, M. Lukosius, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 34
Contribution of pipe diffusion to surface segregation kinetics
1988 · W. Arabczyk, M. Militzer, et al. · Surface Science · 33
A novel surface reconstruction: subsurface interstitials stabilize Si(113)3 × 2
1995 · J. Da̧browski, H.-J. Müssig, et al. · Surface Science · 32
Dielectric constant and leakage of BaZrO3 films
2009 · G. Łupina, J. Dąbrowski, et al. · Applied Physics Letters · 31
Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors
2009 · T. Schroeder, A. Giussani, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 31
Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
2008 · T Schroeder, P Zaumseil, et al. · New Journal of Physics · 31
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Works count: 91
Citation count: 2,020
H-index: 29
I10-index: 58
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