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Hayao Kasai

Observed names: H. Kasai, KASAI, Hayao, Kasai, Hayao
ORCID: 0009-0008-1895-6154
Observed ORCID: 0009-0008-1895-6154
OpenAlex ID: A5049108574
Nitrogen ion implantation isolation technology for normally‐off GaN MISFETs on p‐GaN substrate
2014 · Hayao Kasai, Hiroki Ogawa, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16
10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility
2024 · Xinyi Wen, Bhawani Shankar, et al. · IEEE Electron Device Letters · 12
Monolithic Bidirectional GaN-on-GaN Vertical Transistor Technologies: Exploring Bidirectional CAVET for Next-Generation Switching Applications with Symmetrical Power Control
2024 · Xinyi Wen, Hayao Kasai, et al. · IEEE Electron Devices Magazine · 10
Wrap-Around Gate Delivering $600\mathrm{V}/1.0\ \mathrm{m}\Omega\cdot \text{cm}^{2}$, Normally-Off, Dispersion-Free CAVETs with Record-High Gate Swing
2024 · X. Wen, H. Kasai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
Normally‐off GaN MOSFETs with high‐k dielectric CeO2 films deposited by RF sputtering
2014 · Hiroki Ogawa, Takuya Okazaki, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5
984 V/3.0 mΩ·cm 2 Normally-Off and 817 V/ 2.7 mΩ·cm 2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
2025 · Xinyi Wen, Hayao Kasai, et al. · IEEE Electron Device Letters · 4
First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET)
2024 · X. Wen, H. Kasai, et al. · Conference digest · 4
High performance normally‐off self‐aligned metal gate GaN MISFETs on free‐standing GaN substrates
2014 · Hiroki Ogawa, Hayao Kasai, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Exploring the performance of GaN trench CAVETs from cryogenic to elevated temperatures
2025 · X. Wen, K. Lee, et al. · Frontiers in Electronics · 2
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Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs
2017 · Hayao Kasai, Takuya Oikawa, et al. · Journal of Materials Science and Chemical Engineering
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GaN MISFETs Using Tilt Angle Ion Implantation of Magnesium
2016 · Hayao Kasai, Takuya Oikawa, et al. · IEEJ Transactions on Electronics Information and Systems
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イオン注入GaN-MISFETの高性能化に関する研究
2015 · 葛西, 駿, KASAI, Hayao · Institutional Repositories DataBase (IRDB)
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HIGH POWER OPERATION OF SELF-ALIGNED ON-IMPLANTED MISFETs ON p-GaN SUBSTRATE
2015 · Kimura, Jun, Kasai, Hayao, et al. · Institutional Repositories DataBase (IRDB)
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THRESHOLD VOLTAGE CONTROL OF GaN MISFETs USING TILT ANGLE ION IMPLANTATION OF MAGNESIUM
2015 · Kasai, Hayao, Oikawa, Takuya, et al. · Institutional Repositories DataBase (IRDB)
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Normally-off GaN MISFETs Using Ion Implantation of Magnesium
2014 · Hayao Kasai · The Japan Society of Applied Physics
NITROGEN ION IMPLANTATION ISOLATION TECHNOLOGY FOR NORMALLY-OFF GaN MISFETS ON p-GaN SUBSTRATE
2014 · Kasai, Hayao, Ogawa, Hiroki, et al. · Institutional Repositories DataBase (IRDB)
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ELECTRICAL PROPERTIES OF SELF-ALIGNED METAL GATE GaN MISFETS ON FREE-STANDING GaN SUBSTRATES
2014 · Ogawa, Hiroki, Kasai, Hayao, et al. · Institutional Repositories DataBase (IRDB)
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MISFETs with Ion Implanted Isolation Layers on p-GaN Substrate
2013 · Hayao Kasai · The Japan Society of Applied Physics
Study on MISFETs with Ion Implanted Isolation Layers on p-GaN substrate
2013 · Hayao Kasai · The Japan Society of Applied Physics
ELECTRICAL PROPERTIES OF Si ION-IMPLANTED GaN MISFET
2013 · Kasai, Hayao, Ogawa, Hiroki, et al. · Institutional Repositories DataBase (IRDB)
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Works count: 20
Citation count: 64
H-index: 5
I10-index: 3
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