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Kurt A. Moen
Observed names:
K. A. Moen,
K. Moen,
K.A. Moen,
Kurt Moen,
Moen, K.
Observed institutions:
Georgia Institute of Technology,
Tower Semiconductor (Israel),
Georgia Tech Research Institute,
Auburn University,
University of California, Berkeley
ORCID:
0000-0001-7697-8636
Observed ORCID:
0000-0001-7697-8636
OpenAlex ID:
A5054295528
Sub-1-K Operation of SiGe Transistors and Circuits
2009
·
L. Najafizadeh
, J.S. Adams
, et al.
·
IEEE Electron Device Letters
·
52
Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs
2012
·
Kurt A. Moen
, Partha Sarathi Chakraborty
, et al.
·
IEEE Transactions on Electron Devices
·
41
Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs
2009
·
Jonathan A. Pellish
, Robert A. Reed
, et al.
·
IEEE Transactions on Nuclear Science
·
37
PDF
Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits
2009
·
Laleh Najafizadeh
, Stanley D. Phillips
, et al.
·
IEEE Transactions on Nuclear Science
·
36
Single-Event Response of the SiGe HBT Operating in Inverse-Mode
2012
·
S. D. Phillips
, K. A. Moen
, et al.
·
IEEE Transactions on Nuclear Science
·
29
Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology
2012
·
Nelson E. Lourenco
, Robert L. Schmid
, et al.
·
IEEE Radiation Effects Data Workshop (REDW)
·
28
An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS
2013
·
Nelson E. Lourenco
, Stanley D. Phillips
, et al.
·
IEEE Transactions on Nuclear Science
·
24
Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs
2010
·
Marek Turowski
, Jonathan A. Pellish
, et al.
·
IEEE Transactions on Nuclear Science
·
23
An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits
2013
·
Troy D. England
, Rajan Arora
, et al.
·
IEEE Transactions on Nuclear Science
·
21
A Tale of Two Phases: An Overview of Phase-Change Material RF Switch Technology: Sub-20-fs RON*COFF RF Switch Technology for the Mm-Wave and 5G/6G Revolutions
2024
·
Nabil El-Hinnawy
, Gregory Slovin
, et al.
·
IEEE Microwave Magazine
·
20
Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit
2011
·
Kurt A. Moen
, Laleh Najafizadeh
, et al.
·
IEEE Transactions on Nuclear Science
·
20
Proton-induced SEU in SiGe digital logic at cryogenic temperatures
2008
·
Akil. K. Sutton
, Kurt Moen
, et al.
·
Solid-State Electronics
·
19
Wide temperature range compact modeling of SiGe HBTs for space applications
2011
·
Lan Luo
, Ziyan Xu
, et al.
·
Southeastern Symposium on System Theory (SSST)
·
16
Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS
2010
·
Kurt A. Moen
, Stanley D. Phillips
, et al.
·
IEEE Transactions on Nuclear Science
·
15
Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K
2009
·
Lan Luo
, Guofu Niu
, et al.
·
IEEE Transactions on Electron Devices
·
14
Establishing Best-Practice Modeling Approaches for Understanding Single-Event Transients in Gb/s SiGe Digital Logic
2012
·
Kurt A. Moen
, Stanley D. Phillips
, et al.
·
IEEE Transactions on Nuclear Science
·
13
Phase-Change Material RF Switches and Monolithic Integration in 180 nm RF-SOI CMOS Processes
2021
·
Gregory Slovin
, Nabil El-Hinnawy
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
12
Advances in RF foundry technology for wireless and wireline communications
2016
·
P. Hurwitz
, R. Kanawati
, et al.
·
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
·
12
Optimization of SiGe bandgap-based circuits for up to 300°C operation
2010
·
D.B. Thomas
, L. Najafizadeh
, et al.
·
Solid-State Electronics
·
9
Measurement and Modeling of Carrier Transport Parameters Applicable to SiGe BiCMOS Technology Operating in Extreme Environments
2010
·
Kurt A. Moen
, John D. Cressler
·
IEEE Transactions on Electron Devices
·
9
SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures
2010
·
Jiahui Yuan
, Kurt A. Moen
, et al.
·
IEEE Transactions on Electron Devices
·
8
Performance and reliability of SiGe devices and circuits for high-temperature applications
2009
·
Dylan Thomas
, John D. Cressler
, et al.
·
8
An Investigation on the Optimization and Scaling of Complementary SiGe HBTs
2012
·
P. S. Chakraborty
, K. A. Moen
, et al.
·
IEEE Transactions on Electron Devices
·
6
An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds
2010
·
Jiahui Yuan
, John D. Cressler
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
6
Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS
2010
·
Rajan Arora
, Kurt A. Moen
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
6
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Works count:
42
Citation count:
517
H-index:
14
I10-index:
18
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