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Yasushi Hiroshima
Observed names:
Y. Hiroshima,
Yasushi Hiroshima Yasushi Hiroshima
Institution:
KOA Corporation (Japan)
Observed institutions:
Epson (United States),
Shinshu University,
Kawasaki Heavy Industries (Japan),
Seiko Holdings (Japan),
KOA Corporation (Japan),
Nagaoka University of Technology,
Delft University of Technology
show all 7
ORCID:
0000-0002-1216-5086
Observed ORCID:
0000-0002-1216-5086
OpenAlex ID:
A5055538996
Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain
2005
·
V. Rana
, R. Ishihara
, et al.
·
IEEE Transactions on Electron Devices
·
45
High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor
2002
·
Seiichiro Higashi
, Daisuke Abe
, et al.
·
Japanese Journal of Applied Physics
·
42
PDF
Effects of Capping Layer on Grain Growth with µ-Czochralski Process during Excimer Laser Crystallization
2006
·
Ming He
, Ryoichi Ishihara
, et al.
·
Japanese Journal of Applied Physics
·
35
Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
2005
·
R. Ishihara
, M. He
, et al.
·
Thin Solid Films
·
32
Fundamental properties in the formation of Co, Ni, and Pt metal thin films using pulsed laser deposition
1996
·
Y. Hiroshima
, T. Ishiguro
, et al.
·
Journal of Applied Physics
·
31
Single-Grain Si TFTs With ECR-PECVD Gate $hbox SiO_2$
2004
·
R. Ishihara
, Y. Hiroshima
, et al.
·
IEEE Transactions on Electron Devices
·
30
PDF
MgO(200) Highly Oriented Films on Si(100) Synthesized by Ambient-Controlled Pulsed KrF Excimer Laser Deposition Method
1996
·
Takashi Ishiguro
, Yasushi Hiroshima
, et al.
·
Japanese Journal of Applied Physics
·
30
Microstructure characterization of location-controlled Si-islands crystallized by excimer laser in the μ-Czochralski (grain filter) process
2006
·
R. Ishihara
, D. Danciu
, et al.
·
Journal of Crystal Growth
·
18
Capping Layer on Thin Si Film for µ-Czochralski Process with Excimer Laser Crystallization
2006
·
Rana Vikas
, Ryoichi Ishihara
, et al.
·
Japanese Journal of Applied Physics
·
17
PDF
Single-Grain Si TFTs and Circuits Inside Location-Controlled Grains Fabricated Using a Capping Layer of $\hbox{SiO}_{2}$
2007
·
Vikas Rana
, Ryoichi Ishihara
, et al.
·
IEEE Transactions on Electron Devices
·
15
High performance single grain si tfts inside a location-controlled grain by μ-czochralski process with capping layer
2006
·
R. Vikas
, R. Ishihara
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
14
Highly C-Axis-Oriented Pb(Zr, Ti)O3 Films Prepared by Sputtering
1991
·
Tatsuo Fukami
, Isamu Minemura
, et al.
·
Japanese Journal of Applied Physics
·
14
PDF
Gate oxide induced switch-on undershoot current observed in thin-film transistors
2005
·
Feng Yan
, Piero Migliorato
, et al.
·
Applied Physics Letters
·
12
PDF
Probing Depth Study of Conversion Electron/He Ion Yield XAFS Spectroscopy on Strontium Titanate Thin Films
1999
·
Etsuya Yanase
, Iwao Watanabe
, et al.
·
Analytical Sciences
·
12
Hybrid-Type Temperature Sensor Using Thin-Film Transistors
2014
·
Mutsumi Kimura
, Kazuki Kojima
, et al.
·
IEEE Journal of the Electron Devices Society
·
11
PDF
Formation of a Frozen Nitrogen Target and Characterization for the Application of Pulsed Laser Deposition
1997
·
Yasushi Hiroshima
, Takashi Ishiguro
, et al.
·
Japanese Journal of Applied Physics
·
9
PDF
Evaluation of Thermal Annealing Before and After Formation of Gate Insulator Films by Extracting Trap Densities for SPC Poly-Si TFTs
2013
·
Mutsumi Kimura
, Yasushi Hiroshima
·
IEEE Electron Device Letters
·
6
Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization
2008
·
Ryoichi Ishihara
, Vikas Rana
, et al.
·
Solid-State Electronics
·
6
Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologies
2002
·
S. Higashi
, D. Abe
, et al.
·
IEEE Electron Device Letters
·
6
Synthesis of carbon films using pulsed laser deposition method with frozen CH4 and CO2 targets
1998
·
Takashi Ishiguro
, Kotaro Esaki
, et al.
·
Applied Surface Science
·
6
Sequential Deposition of NbN/MgO Film on Si(100) Using Pulsed KrF Excimer Laser Deposition Method with Different Ambiences
1996
·
Yasushi Hiroshima
, Takashi Ishiguro
, et al.
·
Japanese Journal of Applied Physics
·
6
Single-grain Si thin-film transistors SPICE model, analog and RF circuit applications
2008
·
A. Baiano
, M. Danesh
, et al.
·
Solid-State Electronics
·
5
Applications of Pulsed Excimer Laser Deposition with a Frozen Nitrogen Target to Deposition of NbN and BN Films
1997
·
Yasushi Hiroshima
, Takashi Ishiguro
, et al.
·
Japanese Journal of Applied Physics
·
5
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory
2023
·
Mutsumi Kimura
, Ryo Tanaka
, et al.
·
IEEE Transactions on Electron Devices
·
4
Single-grain Si thin-film transistors for analog and RF circuit applications
2007
·
N. Saputra
, M. Danesh
, et al.
·
European Solid-State Device Research Conference
·
4
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Works count:
45
Citation count:
434
H-index:
12
I10-index:
15
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