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Adrian J. Murrell

Observed names: A J Murrell, A. J. Murrell, A. Murrell, A.J. Murrell, Adrian Murrell
OpenAlex ID: A5059074078
Roadmap for the next-generation of hybrid photovoltaic-thermal solar energy collectors
2018 · A. Mellor, D. Alonso Alvarez, et al. · Solar Energy · 122
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Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs
2002 · G. Timp, A. Agarwal, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 84
Increasing market opportunities for renewable energy technologies with innovations in aquifer thermal energy storage
2019 · N. Hoekstra, M. Pellegrini, et al. · The Science of The Total Environment · 36
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Aluminium film growth by chemical vapour deposition of AlH3(NMe3)2
1990 · Andrew T. S. Wee, Adrian J. Murrell, et al. · Journal of the Chemical Society Chemical Communications · 27
Elemental B distributions and clustering in low-energy B+ ion-implanted Si
2000 · T.-S. Wang, A. G. Cullis, et al. · Applied Physics Letters · 19
Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation
2000 · A. J. Murrell, E. J. H. Collart, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 19
Cluster formation during annealing of ultra-low-energy boron-implanted silicon
2000 · E. J. H. Collart, A. J. Murrell, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 13
Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants
1999 · M. A. Foad, A. J. Murrell, et al. · MRS Proceedings · 11
Modeling of ultra-low energy boron implantation in silicon
2002 · G. Hobler, H.-H. Vuong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Electrical Characterization of Ultrashallow Dopant Profiles
2000 · T. Clarysse, W. Vandervorst, et al. · Journal of The Electrochemical Society · 10
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Junction profiles of sub keV ion implantation for deep sub-quarter micron devices
2002 · A. Al-Bayati, S. Tandon, et al. · International Conference on Ion Implantation Technology · 8
Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing
1998 · E. J. H. Collart, G. de Cock, et al. · MRS Proceedings · 8
Process integration issues for doping of ultrashallow junctions
2000 · M. I. Current, M. A. Foad, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling
2000 · G. A. Cooke, T. J. Ormsby, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
The adsorption and thermal decomposition of PH3and NH3on GaAs(100)
1991 · N K Singh, A J Murrell, et al. · Journal of Physics Condensed Matter · 6
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Characterisation of ultra-shallow junctions using advanced SIMS, SRP and HRTEM techniques
2002 · A.J. Murrell, E.J.H. Collart, et al. · International Conference on Ion Implantation Technology · 5
Electron-volt, high current implants into silicon SDR (Surface damage region) and the effect of anneal time to form 200 to 700 angstrom, low leakage junctions
2002 · S. Moffatt, A. Murrell, et al. · International Conference on Ion Implantation Technology · 5
Production-worthy shallow junction formation for sub-micron technologies using electron-volt ion implantation in the applied materials xR LEAP/sup TM/
2003 · A.J. Murrell, E.J.H. Collart, et al. · International Conference on Ion Implantation Technology · 4
Analytical techniques for measuring contamination introduced during ion implantation
2002 · S. Biswas, F. McQuillan, et al. · International Conference on Ion Implantation Technology · 4
Mechanisms of elemental contamination in ion implantation equipment
2002 · M.T. Wauk, A. Murrell, et al. · International Conference on Ion Implantation Technology · 4
Charge exchange cross sections relevant to ion implantation for ultra shallow junctions
2002 · J.A. Van Den Berg, G. Wostenholm, et al. · International Conference on Ion Implantation Technology · 3
Dopant cross-contamination reduction with a 3-position beamstop
2002 · A. Murrell, M. Wauk, et al. · International Conference on Ion Implantation Technology · 2
A new tool for nondestructive monitoring of ion implantation
2002 · P.G. Coleman, C.P. Burrows, et al. · International Conference on Ion Implantation Technology · 2
TCAD modeling and experimental investigation of indium for advanced CMOS technology
2002 · H. Graoui, A. Al-Bayati, et al. · International Conference on Ion Implantation Technology · 2
Optimised Charging Performance On Quantum X Ion Implanters
2006 · David A. Kirkwood, Takao Sakase, et al. · AIP conference proceedings · 1
Works count: 37
Citation count: 422
H-index: 10
I10-index: 10
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