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Laurent Brunel

Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions
2015 · Leny Baczkowski, Jean-Claude Jacquet, et al. · IEEE Transactions on Electron Devices · 63
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress
2013 · L. Brunel, B. Lambert, et al. · Microelectronics Reliability · 36
10W K band GaN MMIC amplifier embedded in Waveguide-based Metal Ceramic Package
2019 · L. Marechal, B. Gerfault, et al. · European Microwave Integrated Circuits Conference · 18
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements
2012 · L. Brunel, N. Malbert, et al. · European Solid-State Device Research Conference · 16
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements
2013 · S. Karboyan, J.G. Tartarin, et al. · Microelectronics Reliability · 14
Schottky gate of AlGaN/GaN HEMTs: Investigation with DC and low frequency noise measurements after 7000 hours HTOL test
2015 · M. Rzin, A. Curutchet, et al. · International Conference on Noise and Fluctuations · 13
Temperature measurements in RF operating conditions of AlGaN/GaN HEMTs using IR microscopy and Raman spectroscopy
2015 · Leny Baczkowski, Jean-Claude Jacquet, et al. · European Microwave Integrated Circuits Conference · 12
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs
2015 · M. Rzin, N. Labat, et al. · Microelectronics Reliability · 12
Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability
2017 · L. Brunel, B. Lambert, et al. · IEEE Transactions on Electron Devices · 10
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
2012 · B. Lambert, N. Labat, et al. · Microelectronics Reliability · 9
Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K
2013 · M. Rzin, Arnaud Curutchet, et al. · HAL · 7
Transient thermal simulation of a SiP FO-WLP embedding a GaN power amplifier
2024 · N’Doua Luc Arnaud Kakou, Raphael Sommet, et al. · International Workshop on Thermal Investigations of ICs and Systems · 5
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Thermal multiscale simulation of a FO-WLP SiP including a GaN Power Amplifier
2024 · N’Doua Luc Arnaud Kakou, Raphael Sommet, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 3
Three Stage 5-18.5 GHz High Gain and High Power Amplifier Based on 0.15 μm GaN Technology
2018 · M. Dinari, G. Mouginot, et al. · European Microwave Integrated Circuits Conference · 2
Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites
2014 · Laurent Brunel · theses.fr (ABES) · 2
Compact GaN RF-Switches for Power Applications
2022 · Samira Driad, Charles Teyssandier, et al. · European Microwave Integrated Circuits Conference · 1
Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications
2019 · S. Driad, C. Teyssandier, et al. · European Microwave Integrated Circuits Conference · 1
IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs
2015 · Lény Baczkowski, Franck Vouzelaud, et al. · Proceedings - International Symposium for Testing and Failure Analysis · 1
GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA
2026 · Samira Bouzid-Driad, Frederic Drillet, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
Benefits of AlGaN/GAN thermal ROM coupling with industrial non-linear transistor model
2022 · C. Chang, L. Brunel · European Microwave Integrated Circuits Conference
Etude du contact Schottky de HEMTs AlGaN/GaN sur substrat SiC après 7000h de test de vieillissement de type HTOL
2015 · Rzin, Mehdi, Curutchet, Arnaud, et al. · HAL
Etude de l’effet « belly shape » dans les HEMT GaN sur substrat SiC
2015 · Nathalie Malbert, Laurent Brunel, et al. · HAL
Critical failure mechanism of 0.25 µm AlGaN/GaN HEMT under severe stress test conditions
2014 · Carisetti, Dominique, Thales R&t, Sarazin, Nicolas, et al. · HAL
Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement
2013 · Dominique Carisetti, Nicolas Sarazin, et al. · Proceedings - International Symposium for Testing and Failure Analysis
Analyse électrique des courants de fuite de HEMTs AlGaN/GaN sur SiC
2013 · M. Rzin, Nathalie Labat, et al. · HAL
Works count: 27
Citation count: 225
H-index: 9
I10-index: 9
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